Citation: Cf. Yeh et al., INVESTIGATION OF SILICON-OXIDE FILMS PREPARED BY ROOM-TEMPERATURE IONPLATING, Journal of applied physics, 83(2), 1998, pp. 1107-1113
Citation: Dm. Guyer et al., GENOMIC ANALYSIS OF A PATHOGENICITY ISLAND IN UROPATHOGENIC ESCHERICHIA-COLI CFT073 - DISTRIBUTION OF HOMOLOGOUS SEQUENCES AMONG ISOLATES FROM PATIENTS WITH PYELONEPHRITIS, CYSTITIS, AND CATHETER-ASSOCIATED BACTERIURIA AND FROM FECAL SAMPLES, Infection and immunity, 66(9), 1998, pp. 4411-4417
Citation: Cf. Yeh et al., O-2-PLASMA PASSIVATION EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS USING ION PLATING METHOD, Journal of the Electrochemical Society, 145(1), 1998, pp. 252-258
Citation: Xj. Yin et al., CONDUCTIVITY ENHANCEMENT IN TRANSPARENT ZNO FILMS VIA AL-DOPING PRODUCED BY CW-CO2 LASER-INDUCED EVAPORATION, Surface & coatings technology, 90(3), 1997, pp. 239-246
Citation: Js. Kao et al., PATHOGENICITY ISLAND SEQUENCES OF PYELONEPHRITOGENIC ESCHERICHIA-COLICFT073 ARE ASSOCIATED WITH VIRULENT UROPATHOGENIC STRAINS, Infection and immunity, 65(7), 1997, pp. 2812-2820
Citation: Cf. Yeh et al., PHYSICAL CHARACTERISTICS OF N-2 ANNEALING ON ROOM-TEMPERATURE-DEPOSITED ION PLATING OXIDE, Applied physics letters, 70(12), 1997, pp. 1611-1613
Citation: Cf. Yeh et al., NOVEL GATE DIELECTRIC FILMS FORMED BY ION PLATING FOR LOW-TEMPERATURE-PROCESSED POLYSILICON TFTS, IEEE electron device letters, 17(9), 1996, pp. 421-424
Citation: Pl. Chen et al., LOW-TEMPERATURE GROWTH OF DIAMOND-LIKE FILMS BY CATHODIC ARC PLASMA DEPOSITION, Applied surface science, 92, 1996, pp. 30-34