Authors: TSANG WT KAPRE R SCIORTINO PF

Citation: Wt. Tsang et al., IN-SITU DRY-ETCHING OF INP USING PHOSPHORUS TRICHLORIDE AND REGROWTH INSIDE A CHEMICAL BEAM EPITAXIAL-GROWTH CHAMBER, Journal of crystal growth, 136(1-4), 1994, pp. 42-49

Authors: CHEN YK KAPRE R TSANG WT TATE A HUMPHREY DA FAN L

Citation: Yk. Chen et al., CARBON-DOPED INGAP GAAS/INGAP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A VERY-LOW 1/F NOISE CORNER FREQUENCY OF 108 KHZ GROWN BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 221-224

Authors: CHOA FS TSANG WT LOGAN RA GNALL RP KOCH TL BURRUS CA WU MC CHEN YK KAPRE R

Citation: Fs. Choa et al., INGAAS INGAASP INTEGRATED TUNABLE DETECTOR GROWN BY CHEMICAL BEAM EPITAXY/, Applied physics letters, 63(13), 1993, pp. 1836-1838

Authors: TSANG WT KAPRE R SCIORTINO PF

Citation: Wt. Tsang et al., REACTIVE CHEMICAL BEAM ETCHING OF INP INSIDE A CHEMICAL BEAM EPITAXIAL-GROWTH CHAMBER USING PHOSPHORUS TRICHLORIDE, Applied physics letters, 62(17), 1993, pp. 2084-2086