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Results: 1-13 |
Results: 13
LATTICE-PARAMETER VARIATION IN DOPED GAAS SUBSTRATES DETERMINED USINGHIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY
Authors: HU J HARRISON DA KARASYUK VA WATKINS SP THEWALT MLW BASSIGNANA IC BECKETT DJS HILLIER GC SPRINGTHORPE AJ
Citation: J. Hu et al., LATTICE-PARAMETER VARIATION IN DOPED GAAS SUBSTRATES DETERMINED USINGHIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY, Journal of applied physics, 84(11), 1998, pp. 6305-6311
FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - UNIAXIAL-STRESS
Authors: KARASYUK VA THEWALT MLW AN S LIGHTOWLERS EC
Citation: Va. Karasyuk et al., FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - UNIAXIAL-STRESS, Physical review. B, Condensed matter, 56(24), 1997, pp. 15672-15684
ORIGIN OF SHARP LINES IN PHOTOLUMINESCENCE EMISSION FROM SUBMONOLAYERS OF INAS IN GAAS
Authors: TRAN CA ARES RA KARASYUK VA WATKINS SP LETOURNEAU G LEONELLI R
Citation: Ca. Tran et al., ORIGIN OF SHARP LINES IN PHOTOLUMINESCENCE EMISSION FROM SUBMONOLAYERS OF INAS IN GAAS, Physical review. B, Condensed matter, 55(7), 1997, pp. 4633-4638
FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - ZEEMAN-EFFECT
Authors: KARASYUK VA THEWALT MLW AN S LIGHTOWLERS EC KAMINSKII AS
Citation: Va. Karasyuk et al., FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - ZEEMAN-EFFECT, Physical review. B, Condensed matter, 54(15), 1996, pp. 10543-10558
PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE RADIATION-DAMAGE DEFECTS B-41 (1.1509 EV) IN SILICON
Authors: KAMINSKII AS LAVROV EV KARASYUK VA THEWALT MLW
Citation: As. Kaminskii et al., PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE RADIATION-DAMAGE DEFECTS B-41 (1.1509 EV) IN SILICON, Solid state communications, 97(2), 1996, pp. 137-142
PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-80(1.1470 EV) AND B-19(1)(1.1431 EV) IN SILICON
Authors: KAMINSKII AS LAVROV EV KARASYUK VA THEWALT MLW
Citation: As. Kaminskii et al., PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-80(1.1470 EV) AND B-19(1)(1.1431 EV) IN SILICON, Physical review. B, Condensed matter, 51(8), 1995, pp. 4882-4888
SPLITTING OF THE GROUND-STATE OF SHALLOW ACCEPTORS IN SILICON
Authors: KARASYUK VA AN S THEWALT MLW LIGHTOWLERS EC KAMINSKII AS
Citation: Va. Karasyuk et al., SPLITTING OF THE GROUND-STATE OF SHALLOW ACCEPTORS IN SILICON, Solid state communications, 93(5), 1995, pp. 379-382
DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON - COMMENT
Authors: THEWALT LW KARASYUK VA
Citation: Lw. Thewalt et Va. Karasyuk, DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON - COMMENT, Physical review letters, 75(21), 1995, pp. 3962-3962
FINE-STRUCTURE OF A BOUND MULTIEXCITON COMPLEX IN CDTE
Authors: WOLK JA STEINER TW KARASYUK VA THEWALT MLW
Citation: Ja. Wolk et al., FINE-STRUCTURE OF A BOUND MULTIEXCITON COMPLEX IN CDTE, Physical review. B, Condensed matter, 50(24), 1994, pp. 18030-18033
PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-71(1) (1.1377-EV) IN SILICON
Authors: KAMINSKII AS LAVROV EV KARASYUK VA THEWALT MLW
Citation: As. Kaminskii et al., PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-71(1) (1.1377-EV) IN SILICON, Physical review. B, Condensed matter, 50(11), 1994, pp. 7338-7343
FOURIER-TRANSFORM MAGNETOPHOTOLUMINESCENCE SPECTROSCOPY OF DONOR-BOUND EXCITONS IN GAAS
Authors: KARASYUK VA BECKETT DGS NISSEN MK VILLEMAIRE A STEINER TW THEWALT MLW
Citation: Va. Karasyuk et al., FOURIER-TRANSFORM MAGNETOPHOTOLUMINESCENCE SPECTROSCOPY OF DONOR-BOUND EXCITONS IN GAAS, Physical review. B, Condensed matter, 49(23), 1994, pp. 16381-16397
INTRINSIC SPLITTING OF THE ACCEPTOR GROUND-STATE IN SILICON
Authors: KARASYUK VA THEWALT MLW AN S LIGHTOWLERS EC
Citation: Va. Karasyuk et al., INTRINSIC SPLITTING OF THE ACCEPTOR GROUND-STATE IN SILICON, Physical review letters, 73(17), 1994, pp. 2340-2343
ULTRAHIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF EXCITONS BOUND TO BORON IN SILICON IN MAGNETIC-FIELDS
Authors: KARASYUK VA BRAKE DM THEWALT MLW
Citation: Va. Karasyuk et al., ULTRAHIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF EXCITONS BOUND TO BORON IN SILICON IN MAGNETIC-FIELDS, Physical review. B, Condensed matter, 47(15), 1993, pp. 9354-9360
Risultati: 1-13 |