Authors:
HU J
HARRISON DA
KARASYUK VA
WATKINS SP
THEWALT MLW
BASSIGNANA IC
BECKETT DJS
HILLIER GC
SPRINGTHORPE AJ
Citation: J. Hu et al., LATTICE-PARAMETER VARIATION IN DOPED GAAS SUBSTRATES DETERMINED USINGHIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY, Journal of applied physics, 84(11), 1998, pp. 6305-6311
Authors:
TRAN CA
ARES RA
KARASYUK VA
WATKINS SP
LETOURNEAU G
LEONELLI R
Citation: Ca. Tran et al., ORIGIN OF SHARP LINES IN PHOTOLUMINESCENCE EMISSION FROM SUBMONOLAYERS OF INAS IN GAAS, Physical review. B, Condensed matter, 55(7), 1997, pp. 4633-4638
Authors:
KAMINSKII AS
LAVROV EV
KARASYUK VA
THEWALT MLW
Citation: As. Kaminskii et al., PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE RADIATION-DAMAGE DEFECTS B-41 (1.1509 EV) IN SILICON, Solid state communications, 97(2), 1996, pp. 137-142
Authors:
KAMINSKII AS
LAVROV EV
KARASYUK VA
THEWALT MLW
Citation: As. Kaminskii et al., PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-80(1.1470 EV) AND B-19(1)(1.1431 EV) IN SILICON, Physical review. B, Condensed matter, 51(8), 1995, pp. 4882-4888
Citation: Lw. Thewalt et Va. Karasyuk, DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON - COMMENT, Physical review letters, 75(21), 1995, pp. 3962-3962
Authors:
KAMINSKII AS
LAVROV EV
KARASYUK VA
THEWALT MLW
Citation: As. Kaminskii et al., PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-71(1) (1.1377-EV) IN SILICON, Physical review. B, Condensed matter, 50(11), 1994, pp. 7338-7343
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