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Results: 1-10 |
Results: 10
EFFECT OF OXIDE PRECIPITATE SIZE ON SLIP GENERATION IN LARGE-DIAMETEREPITAXIAL WAFERS
Authors: AKATSUKA M SUEOKA K KATAHAMA H KOIE Y SADAMITSU S
Citation: M. Akatsuka et al., EFFECT OF OXIDE PRECIPITATE SIZE ON SLIP GENERATION IN LARGE-DIAMETEREPITAXIAL WAFERS, JPN J A P 1, 37(9A), 1998, pp. 4663-4666
SLIP LENGTH IN SILICON-WAFERS CAUSED BY INDENTATION DURING HEAT-TREATMENT
Authors: AKATSUKA M SUEOKA K KATAHAMA H MORIMOTO N ADACHI N
Citation: M. Akatsuka et al., SLIP LENGTH IN SILICON-WAFERS CAUSED BY INDENTATION DURING HEAT-TREATMENT, JPN J A P 1, 37(10), 1998, pp. 5444-5450
EFFECT OF OXIDE PRECIPITATE SIZES ON THE MECHANICAL STRENGTH OF CZOCHRALSKI SILICON-WAFERS
Authors: SUEOKA K AKATSUKA M KATAHAMA H ADACHI N
Citation: K. Sueoka et al., EFFECT OF OXIDE PRECIPITATE SIZES ON THE MECHANICAL STRENGTH OF CZOCHRALSKI SILICON-WAFERS, JPN J A P 1, 36(12A), 1997, pp. 7095-7099
PINNING EFFECT ON PUNCHED-OUT DISLOCATIONS IN SILICON-WAFERS INVESTIGATED USING INDENTATION METHOD
Authors: AKATSUKA M SUEOKA K KATAHAMA H MORIMOTO N ADACHI N
Citation: M. Akatsuka et al., PINNING EFFECT ON PUNCHED-OUT DISLOCATIONS IN SILICON-WAFERS INVESTIGATED USING INDENTATION METHOD, JPN J A P 2, 36(11A), 1997, pp. 1422-1425
DEPENDENCE OF MECHANICAL STRENGTH OF CZOCHRALSKI SILICON-WAFERS ON THE TEMPERATURE OF OXYGEN PRECIPITATION ANNEALING
Authors: SUEOKA K AKATSUKA M KATAHAMA H ADACHI N
Citation: K. Sueoka et al., DEPENDENCE OF MECHANICAL STRENGTH OF CZOCHRALSKI SILICON-WAFERS ON THE TEMPERATURE OF OXYGEN PRECIPITATION ANNEALING, Journal of the Electrochemical Society, 144(3), 1997, pp. 1111-1120
LATTICE-RELAXATION OF GAAS ISLANDS GROWN ON SI(100) SUBSTRATE
Authors: ASAI K KAMEI K KATAHAMA H
Citation: K. Asai et al., LATTICE-RELAXATION OF GAAS ISLANDS GROWN ON SI(100) SUBSTRATE, Applied physics letters, 71(5), 1997, pp. 701-703
THREADING DISLOCATION REDUCTION IN GAAS ON SI WITH A SINGLE INGAAS INTERMEDIATE LAYER
Authors: SHIBA Y ASAI K KAMEI K KATAHAMA H
Citation: Y. Shiba et al., THREADING DISLOCATION REDUCTION IN GAAS ON SI WITH A SINGLE INGAAS INTERMEDIATE LAYER, JPN J A P 1, 34(3), 1995, pp. 1466-1471
FORMATION OF STRAIN-FREE GAAS-ON-SI STRUCTURES BY ANNEALING UNDER ULTRAHIGH PRESSURE
Authors: ISHIWARA H HOSHINO T KATAHAMA H
Citation: H. Ishiwara et al., FORMATION OF STRAIN-FREE GAAS-ON-SI STRUCTURES BY ANNEALING UNDER ULTRAHIGH PRESSURE, Materials chemistry and physics, 40(4), 1995, pp. 225-229
CRYSTALLINE QUALITY OF STRAIN-FREE GAAS-ON-SI STRUCTURES FORMED BY ANNEALING UNDER ULTRAHIGH PRESSURE
Authors: ISHIWARA H HOSHINO T KATAHAMA H
Citation: H. Ishiwara et al., CRYSTALLINE QUALITY OF STRAIN-FREE GAAS-ON-SI STRUCTURES FORMED BY ANNEALING UNDER ULTRAHIGH PRESSURE, Applied physics letters, 66(18), 1995, pp. 2373-2375
DYNAMICAL FORMATION PROCESS OF PURE EDGE MISFIT DISLOCATIONS AT GAAS SI INTERFACES IN POSTANNEALING/
Authors: ASAI K KATAHAMA H SHIBA Y
Citation: K. Asai et al., DYNAMICAL FORMATION PROCESS OF PURE EDGE MISFIT DISLOCATIONS AT GAAS SI INTERFACES IN POSTANNEALING/, JPN J A P 1, 33(9A), 1994, pp. 4843-4850
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