Citation: M. Endo et A. Katsuyama, APPLICATION OF A NEW ADHESION PROMOTER TO STABLE CHEMICALLY AMPLIFIEDRESIST PATTERN FABRICATION ON BORON PHOSPHORUS SILICATE GLASS SUBSTRATES, JPN J A P 1, 36(12B), 1997, pp. 7617-7619
Authors:
YAMASHITA K
MURO M
KOBAYASHI S
KATSUYAMA A
EDO M
Citation: K. Yamashita et al., OVERLAY ACCURACY MEASUREMENT TECHNIQUE USING THE LATENT IMAGE ON A CHEMICALLY AMPLIFIED RESIST, JPN J A P 1, 35(1A), 1996, pp. 56-60
Citation: K. Hashimoto et al., NEW CHEMICALLY AMPLIFIED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 37-43
Authors:
SASAGO M
MATSUO T
YAMASHITA K
ENDO M
MATSUOKA K
KOIZUMI T
KATSUYAMA A
NOMURA N
Citation: M. Sasago et al., NEW TECHNOLOGIES OF KRF EXCIMER-LASER LITHOGRAPHY SYSTEM IN 0.25 MICRON COMPLEX CIRCUIT PATTERNS, IEICE transactions on electronics, E77C(3), 1994, pp. 416-424