Authors:
MCDOUGALL SD
KOWALSKI OP
HAMILTON CJ
CAMACHO F
QIU BC
KE ML
DELARUE RM
BRYCE AC
MARSH JH
Citation: Sd. Mcdougall et al., MONOLITHIC INTEGRATION VIA A UNIVERSAL DAMAGE ENHANCED QUANTUM-WELL INTERMIXING TECHNIQUE, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 636-646
Authors:
HELMY AS
JOHNSON NP
KE ML
BRYCE AC
AITCHISON JS
MARSH JH
GONTIJO I
BULLER GS
DAVIDSON J
DAWSON P
Citation: As. Helmy et al., A STUDY OF IMPURITY-FREE VACANCY DISORDERING IN GAAS-ALGAAS FOR IMPROVED MODELING, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 661-668
Citation: P. Armour et al., HOT-ELECTRON TRANSMISSION THROUGH METAL-METAL INTERFACES - A STUDY OFAU FE/AU TRILAYERS ON GAAS SUBSTRATES/, Applied surface science, 123, 1998, pp. 412-417
Authors:
KE ML
HELMY S
BRYCE AC
MARSH JH
DAVIDSON J
DAWSON P
Citation: Ml. Ke et al., THE ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF INTERMIXED GAAS ALGAAS DOUBLE-QUANTUM WELLS/, Journal of applied physics, 84(5), 1998, pp. 2855-2857
Authors:
KE ML
WESTWOOD DI
MATTHAI CC
RICHARDSON BE
WILLIAMS RH
Citation: Ml. Ke et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF AU-INAS-GAAS SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2786-2789
Authors:
KE ML
WILLIAMS RH
WESTWOOD DI
RICHARDSON BE
Citation: Ml. Ke et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY TO PROBE INTERFACES OF SIMPLE DEVICE STRUCTURES, Microelectronic engineering, 31(1-4), 1996, pp. 195-213
Authors:
KE ML
WESTWOOD DI
MATTHAI CC
RICHARDSON BE
WILLIAMS RH
Citation: Ml. Ke et al., HOT-ELECTRON TRANSPORT THROUGH AU GAAS AND AU/GAAS/ALAS HETEROJUNCTION INTERFACES - BALLISTIC-ELECTRON-EMISSION-MICROSCOPY MEASUREMENT AND MONTE-CARLO SIMULATION/, Physical review. B, Condensed matter, 53(8), 1996, pp. 4845-4849
Authors:
WESTWOOD DI
KE ML
LELARGE F
LARUELLE F
ETIENNE B
Citation: Di. Westwood et al., CHARACTERIZATION OF BURIED LATERAL PERIOD SUPERLATTICES BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Surface science, 352, 1996, pp. 802-806
Authors:
KE ML
CHEN X
ZERVOS M
NAWAZ R
ELLIOTT M
WESTWOOD DI
BLOOD P
GODFREY MJ
WILLIAMS RH
Citation: Ml. Ke et al., OPTICAL AND ELECTRICAL-PROPERTIES OF SELECTIVELY DELTA-DOPED STRAINEDINXGA1-XAS GAAS QUANTUM-WELLS/, Journal of applied physics, 79(5), 1996, pp. 2627-2632
Authors:
KE ML
WESTWOOD DI
WILKS S
HEGHOYAN S
KESTLE A
MATTHAI CC
RICHARDSON BE
WILLIAMS RH
Citation: Ml. Ke et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED AND RELAXED IN0.35GA0.65AS ALAS INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1684-1688
Citation: Ml. Ke et al., THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE FOR SELECTIVELY DELTA-DOPED STRAINED INXGA1-XAS GAAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 51(8), 1995, pp. 5038-5042