Authors:
LACEY G
WHITEHOUSE CR
PARBROOK PJ
CULLIS AG
KEIR AM
MOCK P
JOHNSON AD
SMITH GW
CLARK GF
TANNER BK
MARTIN T
LUNN B
HOGG JHC
EMENY MT
MURPHY B
BENNETT S
Citation: G. Lacey et al., IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/, Applied surface science, 123, 1998, pp. 718-724
Authors:
MOCK P
TANNER BK
LI CR
KEIR AM
JOHNSON AD
LACEY G
CLARK GF
LUNN B
HOGG JCH
Citation: P. Mock et al., DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION (VOL 11, PG 1051, 1996), Semiconductor science and technology, 11(9), 1996, pp. 1363-1363
Authors:
MOCK P
TANNER BK
LI CR
KEIR AM
JOHNSON AD
LACEY G
CLARK GF
LUNN B
HOGG JCH
Citation: P. Mock et al., DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION, Semiconductor science and technology, 11(7), 1996, pp. 1051-1055
Authors:
BARNETT SJ
KEIR AM
CULLIS AG
JOHNSON AD
JEFFERSON J
SMITH GW
MARTIN T
WHITEHOUSE CR
LACEY G
CLARK GF
TANNER BK
SPIRKL W
LUNN B
HOGG JCH
ASHU P
HAGSTON WE
CASTELLI CM
Citation: Sj. Barnett et al., IN-SITU X-RAY TOPOGRAPHY STUDIES DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON (001) GAAS - EFFECTS OF SUBSTRATE DISLOCATION DISTRIBUTION ON STRAIN RELAXATION, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 17-22
Authors:
WHITEHOUSE CR
CULLIS AG
BARNETT SJ
USHER BF
CLARK GF
KEIR AM
TANNER BK
LUNN B
HOGG JCH
JOHNSON AD
LACEY G
SPIRKL W
HAGSTON WE
JEFFERSON JH
ASHU P
SMITH GW
Citation: Cr. Whitehouse et al., IN-SITU X-RAY-IMAGING OF III-V STRAINED-LAYER RELAXATION PROCESSES, Journal of crystal growth, 150(1-4), 1995, pp. 85-91
Authors:
BARNETT SJ
WHITEHOUSE CR
KEIR AM
CLARK GF
USHER B
TANNER BK
EMENY MT
JOHNSON AD
Citation: Sj. Barnett et al., X-RAY TOPOGRAPHY OF LATTICE-RELAXATION IN STRAINED-LAYER SEMICONDUCTORS - POSTGROWTH STUDIES AND A NEW FACILITY FOR INSITU TOPOGRAPHY DURING MBE GROWTH, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 45-49
Authors:
USHER BF
SMITH GW
BARNETT SJ
KEIR AM
PITT AD
Citation: Bf. Usher et al., X-RAY-DIFFRACTION DETERMINATION OF A SEMICONDUCTOR EPILAYER UNIT-CELLORIENTED AND DISTORTED ARBITRARILY, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 181-187