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Results: 1-8 |
Results: 8
IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/
Authors: LACEY G WHITEHOUSE CR PARBROOK PJ CULLIS AG KEIR AM MOCK P JOHNSON AD SMITH GW CLARK GF TANNER BK MARTIN T LUNN B HOGG JHC EMENY MT MURPHY B BENNETT S
Citation: G. Lacey et al., IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/, Applied surface science, 123, 1998, pp. 718-724
DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION (VOL 11, PG 1051, 1996)
Authors: MOCK P TANNER BK LI CR KEIR AM JOHNSON AD LACEY G CLARK GF LUNN B HOGG JCH
Citation: P. Mock et al., DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION (VOL 11, PG 1051, 1996), Semiconductor science and technology, 11(9), 1996, pp. 1363-1363
DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION
Authors: MOCK P TANNER BK LI CR KEIR AM JOHNSON AD LACEY G CLARK GF LUNN B HOGG JCH
Citation: P. Mock et al., DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION, Semiconductor science and technology, 11(7), 1996, pp. 1051-1055
IN-SITU X-RAY TOPOGRAPHY STUDIES DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON (001) GAAS - EFFECTS OF SUBSTRATE DISLOCATION DISTRIBUTION ON STRAIN RELAXATION
Authors: BARNETT SJ KEIR AM CULLIS AG JOHNSON AD JEFFERSON J SMITH GW MARTIN T WHITEHOUSE CR LACEY G CLARK GF TANNER BK SPIRKL W LUNN B HOGG JCH ASHU P HAGSTON WE CASTELLI CM
Citation: Sj. Barnett et al., IN-SITU X-RAY TOPOGRAPHY STUDIES DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON (001) GAAS - EFFECTS OF SUBSTRATE DISLOCATION DISTRIBUTION ON STRAIN RELAXATION, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 17-22
IN-SITU X-RAY-IMAGING OF III-V STRAINED-LAYER RELAXATION PROCESSES
Authors: WHITEHOUSE CR CULLIS AG BARNETT SJ USHER BF CLARK GF KEIR AM TANNER BK LUNN B HOGG JCH JOHNSON AD LACEY G SPIRKL W HAGSTON WE JEFFERSON JH ASHU P SMITH GW
Citation: Cr. Whitehouse et al., IN-SITU X-RAY-IMAGING OF III-V STRAINED-LAYER RELAXATION PROCESSES, Journal of crystal growth, 150(1-4), 1995, pp. 85-91
RAPID CHEMOGRAPHY OF POROUS SILICON UNDERGOING HYDROLYSIS
Authors: CANHAM LT SAUNDERS SJ HEELEY PB KEIR AM COX TI
Citation: Lt. Canham et al., RAPID CHEMOGRAPHY OF POROUS SILICON UNDERGOING HYDROLYSIS, Advanced materials, 6(11), 1994, pp. 865-868
X-RAY TOPOGRAPHY OF LATTICE-RELAXATION IN STRAINED-LAYER SEMICONDUCTORS - POSTGROWTH STUDIES AND A NEW FACILITY FOR INSITU TOPOGRAPHY DURING MBE GROWTH
Authors: BARNETT SJ WHITEHOUSE CR KEIR AM CLARK GF USHER B TANNER BK EMENY MT JOHNSON AD
Citation: Sj. Barnett et al., X-RAY TOPOGRAPHY OF LATTICE-RELAXATION IN STRAINED-LAYER SEMICONDUCTORS - POSTGROWTH STUDIES AND A NEW FACILITY FOR INSITU TOPOGRAPHY DURING MBE GROWTH, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 45-49
X-RAY-DIFFRACTION DETERMINATION OF A SEMICONDUCTOR EPILAYER UNIT-CELLORIENTED AND DISTORTED ARBITRARILY
Authors: USHER BF SMITH GW BARNETT SJ KEIR AM PITT AD
Citation: Bf. Usher et al., X-RAY-DIFFRACTION DETERMINATION OF A SEMICONDUCTOR EPILAYER UNIT-CELLORIENTED AND DISTORTED ARBITRARILY, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 181-187
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