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Results: 1-25 | 26-38
Results: 1-25/38
GAN FIELD EMITTER ARRAY DIODE WITH INTEGRATED ANODE
Authors: UNDERWOOD RD KELLER S MISHRA UK KAPOLNEK D KELLER BP DENBAARS SP
Citation: Rd. Underwood et al., GAN FIELD EMITTER ARRAY DIODE WITH INTEGRATED ANODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 822-825
HIGH AL-CONTENT ALGAN GAN MODFETS FOR ULTRAHIGH PERFORMANCE/
Authors: WU YF KELLER BP FINI P KELLER S JENKINS TJ KEHIAS LT DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., HIGH AL-CONTENT ALGAN GAN MODFETS FOR ULTRAHIGH PERFORMANCE/, IEEE electron device letters, 19(2), 1998, pp. 50-53
GROWTH AND PROPERTIES OF INGAN NANOSCALE ISLANDS ON GAN
Authors: KELLER S KELLER BP MINSKY MS BOWERS JE MISHRA UK DENBAARS SP SEIFERT W
Citation: S. Keller et al., GROWTH AND PROPERTIES OF INGAN NANOSCALE ISLANDS ON GAN, Journal of crystal growth, 190, 1998, pp. 29-32
GAN MICROWAVE ELECTRONICS
Authors: MISHRA UK WU YF KELLER BP KELLER S DENBAARS SP
Citation: Uk. Mishra et al., GAN MICROWAVE ELECTRONICS, IEEE transactions on microwave theory and techniques, 46(6), 1998, pp. 756-761
SHORT-CHANNEL ALGAN GAN MODFETS WITH 50-GHZ F(T) AND 1.7-W/MM OUTPUT-POWER AT 10 GHZ/
Authors: WU YF KELLER BP KELLER S NGUYEN NX LE M NGUYEN C JENKINS TJ KEHIAS LT DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., SHORT-CHANNEL ALGAN GAN MODFETS WITH 50-GHZ F(T) AND 1.7-W/MM OUTPUT-POWER AT 10 GHZ/, IEEE electron device letters, 18(9), 1997, pp. 438-440
BIAS DEPENDENT MICROWAVE PERFORMANCE OF ALGAN GAN MODFETS UP TO 100 V/
Authors: WU YF KELLER S KOZODOY P KELLER BP PARIKH P KAPOLNEK D DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., BIAS DEPENDENT MICROWAVE PERFORMANCE OF ALGAN GAN MODFETS UP TO 100 V/, IEEE electron device letters, 18(6), 1997, pp. 290-292
LOW-RESISTANCE OHMIC CONTACT TO N-GAN WITH A SEPARATE LAYER METHOD
Authors: WU YF JIANG WN KELLER BP KELLER S KAPOLNEK D DENBAARS SP MISHRA UK WILSON B
Citation: Yf. Wu et al., LOW-RESISTANCE OHMIC CONTACT TO N-GAN WITH A SEPARATE LAYER METHOD, Solid-state electronics, 41(2), 1997, pp. 165-168
SELECTIVE-AREA REGROWTH OF GAN FIELD-EMISSION TIPS
Authors: UNDERWOOD RD KAPOLNEK D KELLER BP KELLER S DENBAARS SP MISHRA UK
Citation: Rd. Underwood et al., SELECTIVE-AREA REGROWTH OF GAN FIELD-EMISSION TIPS, Solid-state electronics, 41(2), 1997, pp. 243-245
HIGH-POWER ALGAN GAN HEMTS FOR MICROWAVE APPLICATIONS/
Authors: WU YF KELLER BP KELLER S KAPOLNEK D KOZODOY P DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., HIGH-POWER ALGAN GAN HEMTS FOR MICROWAVE APPLICATIONS/, Solid-state electronics, 41(10), 1997, pp. 1569-1574
SELECTIVE-AREA EPITAXY OF GAN FOR ELECTRON FIELD-EMISSION DEVICES
Authors: KAPOLNEK D UNDERWOOD RD KELLER BP KELLER S DENBAARS SP MISHRA UK
Citation: D. Kapolnek et al., SELECTIVE-AREA EPITAXY OF GAN FOR ELECTRON FIELD-EMISSION DEVICES, Journal of crystal growth, 170(1-4), 1997, pp. 340-343
GROWTH OF BULK INGAN FILMS AND QUANTUM-WELLS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: KELLER S KELLER BP KAPOLNEK D MISHRA UK DENBAARS SP SHMAGIN IK KOLBAS RM KRISHNANKUTTY S
Citation: S. Keller et al., GROWTH OF BULK INGAN FILMS AND QUANTUM-WELLS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 170(1-4), 1997, pp. 349-352
GAN ALGAN MODFET WITH 80 GHZ F(MAX) AND GREATER-THAN-100V GATE-DRAIN BREAKDOWN VOLTAGE/
Authors: NGUYEN NX KELLER BP KELLER S WU YF LE M NGUYEN C DENBAARS SP MISHRA UK GRIDER D
Citation: Nx. Nguyen et al., GAN ALGAN MODFET WITH 80 GHZ F(MAX) AND GREATER-THAN-100V GATE-DRAIN BREAKDOWN VOLTAGE/, Electronics Letters, 33(4), 1997, pp. 334-335
SHORT-CHANNEL AL0.5GA0.5N GAN MODFETS WITH POWER-DENSITY GREATER-THAN-3W/MM AT 18GHZ/
Authors: WU YF KELLER BP FINI P PUSL J LE M NGUYEN NX NGUYEN C WIDMAN D KELLER S DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., SHORT-CHANNEL AL0.5GA0.5N GAN MODFETS WITH POWER-DENSITY GREATER-THAN-3W/MM AT 18GHZ/, Electronics Letters, 33(20), 1997, pp. 1742-1743
ABSORPTION-COEFFICIENT, ENERGY-GAP, EXCITON BINDING-ENERGY, AND RECOMBINATION LIFETIME OF GAN OBTAINED FROM TRANSMISSION MEASUREMENTS
Authors: MUTH JF LEE JH SHMAGIN IK KOLBAS RM CASEY HC KELLER BP MISHRA UK DENBAARS SP
Citation: Jf. Muth et al., ABSORPTION-COEFFICIENT, ENERGY-GAP, EXCITON BINDING-ENERGY, AND RECOMBINATION LIFETIME OF GAN OBTAINED FROM TRANSMISSION MEASUREMENTS, Applied physics letters, 71(18), 1997, pp. 2572-2574
EFFECT OF THE TRIMETHYLGALLIUM FLOW DURING NUCLEATION LAYER GROWTH ONTHE PROPERTIES OF GAN GROWN ON SAPPHIRE
Authors: KELLER S KAPOLNEK D KELLER BP WU YF HEYING B SPECK JS MISHRA UK DENBAARS SP
Citation: S. Keller et al., EFFECT OF THE TRIMETHYLGALLIUM FLOW DURING NUCLEATION LAYER GROWTH ONTHE PROPERTIES OF GAN GROWN ON SAPPHIRE, JPN J A P 2, 35(3A), 1996, pp. 285-288
INVESTIGATION OF IMPROVED REGROWN MATERIAL ON INP SURFACES ETCHED WITH METHANE HYDROGEN/ARGON/
Authors: YU DG CHEN CH KELLER BP HOLMES AL HU EL DENBAARS SP
Citation: Dg. Yu et al., INVESTIGATION OF IMPROVED REGROWN MATERIAL ON INP SURFACES ETCHED WITH METHANE HYDROGEN/ARGON/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3674-3678
SUPPRESSION OF SPINAL AND CORTICAL SOMATOSENSORY-EVOKED POTENTIALS BYDESFLURANE ANESTHESIA
Authors: HAGHIGHI SS SIRINTRAPUN SJ JOHNSON JC KELLER BP ORO JJ
Citation: Ss. Haghighi et al., SUPPRESSION OF SPINAL AND CORTICAL SOMATOSENSORY-EVOKED POTENTIALS BYDESFLURANE ANESTHESIA, Journal of neurosurgical anesthesiology, 8(2), 1996, pp. 148-153
EFFECT OF DESFLURANE ANESTHESIA ON TRANSCORTICAL MOTOR EVOKED-POTENTIALS
Authors: HAGHIGHI SS SIRINTRAPUN SJ KELLER BP ORO JJ MADSEN R
Citation: Ss. Haghighi et al., EFFECT OF DESFLURANE ANESTHESIA ON TRANSCORTICAL MOTOR EVOKED-POTENTIALS, Journal of neurosurgical anesthesiology, 8(1), 1996, pp. 47-51
MEASURED MICROWAVE-POWER PERFORMANCE OF ALGAN GAN MODFET/
Authors: WU YF KELLER BP KELLER S KAPOLNEK D DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., MEASURED MICROWAVE-POWER PERFORMANCE OF ALGAN GAN MODFET/, IEEE electron device letters, 17(9), 1996, pp. 455-457
IT KEEPS GOING AND GOING AND GOING - THE EXPANSION OF FALSE ADVERTISING LITIGATION UNDER THE LANHAM ACT
Authors: KELLER BP
Citation: Bp. Keller, IT KEEPS GOING AND GOING AND GOING - THE EXPANSION OF FALSE ADVERTISING LITIGATION UNDER THE LANHAM ACT, Law and contemporary problems, 59(2), 1996, pp. 131-157
PHOTOCURRENT DECAY IN N-TYPE GAN THIN-FILMS
Authors: QIU CH MELTON W LEKSONO MW PANKOVE JI KELLER BP DENBAARS SP
Citation: Ch. Qiu et al., PHOTOCURRENT DECAY IN N-TYPE GAN THIN-FILMS, Applied physics letters, 69(9), 1996, pp. 1282-1284
VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD-EFFECT TRANSISTORS
Authors: WU YF KELLER BP KELLER S KAPOLNEK D KOZODOY P DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD-EFFECT TRANSISTORS, Applied physics letters, 69(10), 1996, pp. 1438-1440
ROLE OF THREADING DISLOCATION-STRUCTURE ON THE X-RAY-DIFFRACTION PEAKWIDTHS IN EPITAXIAL GAN FILMS
Authors: HEYING B WU XH KELLER S LI Y KAPOLNEK D KELLER BP DENBAARS SP SPECK JS
Citation: B. Heying et al., ROLE OF THREADING DISLOCATION-STRUCTURE ON THE X-RAY-DIFFRACTION PEAKWIDTHS IN EPITAXIAL GAN FILMS, Applied physics letters, 68(5), 1996, pp. 643-645
GROWTH AND CHARACTERIZATION OF BULK INGAN FILMS AND QUANTUM-WELLS
Authors: KELLER S KELLER BP KAPOLNEK D ABARE AC MASUI H COLDREN LA MISHRA UK DENBAARS SP
Citation: S. Keller et al., GROWTH AND CHARACTERIZATION OF BULK INGAN FILMS AND QUANTUM-WELLS, Applied physics letters, 68(22), 1996, pp. 3147-3149
CLEAVED GAN FACETS BY WAFER FUSION OF GAN TO INP
Authors: SINK RK KELLER S KELLER BP BABIC DI HOLMES AL KAPOLNEK D DENBAARS SP BOWERS JE WU XH SPECK JS
Citation: Rk. Sink et al., CLEAVED GAN FACETS BY WAFER FUSION OF GAN TO INP, Applied physics letters, 68(15), 1996, pp. 2147-2149
Risultati: 1-25 | 26-38