Authors: TAUR Y COHEN S WIND S LII T HSU C QUINLAN D CHANG CA BUCHANAN D AGNELLO P MII YJ REEVES C ACOVIC A KESAN V

Citation: Y. Taur et al., EXPERIMENTAL 0.1-MU-M P-CHANNEL MOSFET WITH P-POLYSILICON GATE ON 35-ANGSTROM GATE OXIDE(), IEEE electron device letters, 14(6), 1993, pp. 304-306