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Results:
1-12
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Results: 12
Authors:
HILL D
KHATIBZADEH A
LIU W
KIM T
IKALAINEN P
Citation: D. Hill et al., COMPARISON OF THERMAL-SHUNT AND FLIP-CHIP HBT THERMAL IMPEDANCES - COMMENT ON NOVEL HBT WITH REDUCED THERMAL IMPEDANCE - REPLY, IEEE microwave and guided wave letters, 6(8), 1996, pp. 298-298
Authors:
LIU W
KHATIBZADEH A
SWEDER J
CHAU HF
Citation: W. Liu et al., THE USE OF BASE BALLASTING TO PREVENT THE COLLAPSE OF CURRENT GAIN INALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 245-251
Authors:
HILL D
KHATIBZADEH A
Citation: D. Hill et A. Khatibzadeh, NOVEL HBT WITH REDUCED THERMAL IMPEDANCE, IEEE microwave and guided wave letters, 5(11), 1995, pp. 373-375
Authors:
TUTT MN
PAVLIDIS D
KHATIBZADEH A
BAYRAKTAROGLU B
Citation: Mn. Tutt et al., THE ROLE OF BASEBAND NOISE AND ITS UP-CONVERSION IN HBT OSCILLATOR PHASE NOISE, IEEE transactions on microwave theory and techniques, 43(7), 1995, pp. 1461-1471
Authors:
TUTT MN
PAVLIDIS D
KHATIBZADEH A
BAYRAKTAROGLU B
Citation: Mn. Tutt et al., LOW-FREQUENCY NOISE CHARACTERISTICS OF SELF-ALIGNED ALGAAS GAAS POWERHETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 219-230
Authors:
LIU W
KHATIBZADEH A
KIM T
SWEDER J
Citation: W. Liu et al., 1ST DEMONSTRATION OF HIGH-POWER GAINP GAAS HBT MMIC POWER-AMPLIFIER WITH 9.9-W OUTPUT POWER AT X-BAND/, IEEE microwave and guided wave letters, 4(9), 1994, pp. 293-295
Authors:
COSTA D
KHATIBZADEH A
Citation: D. Costa et A. Khatibzadeh, USE OF SURFACE PASSIVATION LEDGES AND LOCAL NEGATIVE FEEDBACK TO REDUCE AMPLITUDE-MODULATION NOISE IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE microwave and guided wave letters, 4(2), 1994, pp. 45-47
Authors:
LIU W
KIM T
IKALAINEN P
KHATIBZADEH A
Citation: W. Liu et al., HIGH LINEARITY POWER X-BAND GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, IEEE electron device letters, 15(6), 1994, pp. 190-192
Authors:
LIU W
BEAM E
KHATIBZADEH A
Citation: W. Liu et al., 1.5-W CW S-BAND GAINP GAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR/, IEEE electron device letters, 15(6), 1994, pp. 215-217
Authors:
COSTA D
TUTT MN
KHATIBZADEH A
PAVLIDIS D
Citation: D. Costa et al., TRADEOFF BETWEEN 1 F NOISE AND MICROWAVE PERFORMANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1347-1350
Authors:
LIU W
KHATIBZADEH A
Citation: W. Liu et A. Khatibzadeh, THE COLLAPSE OF CURRENT GAIN IN MULTI-FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS - ITS SUBSTRATE-TEMPERATURE DEPENDENCE, INSTABILITY CRITERIA AND MODELING, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1698-1707
Authors:
LIU W
NELSON S
HILL DG
KHATIBZADEH A
Citation: W. Liu et al., CURRENT GAIN COLLAPSE IN MICROWAVE MULTIFINGER HETEROJUNCTION BIPOLAR-TRANSISTORS OPERATED AT VERY HIGH-POWER DENSITIES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1917-1927
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1-12
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