Authors:
IVANCHIK II
KHOKHLOV DR
BELOGOROKHOV AI
POPOVIC Z
ROMCEVIC N
Citation: Ii. Ivanchik et al., STRUCTURE OF DX-LIKE CENTERS IN NARROW-BAND IV-VI SEMICONDUCTORS DOPED WITH GROUP-III ELEMENTS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 608-612
Authors:
ROMCEVIC N
POPOVIC ZV
KHOKHLOV DR
KONIG W
Citation: N. Romcevic et al., FAR-INFRARED SPECTROSCOPY OF LOCALIZED STATES IN INDIUM-DOPED PBTE AND PB(1-X)A(X)TE (A(X)=MN-0.017 SN-0.18) ALLOYS, Infrared physics & technology, 38(2), 1997, pp. 117-122
Citation: A. Devisser et al., CHARACTERISTIC FEATURES OF THE MAGNETORESISTANCE OF PB1-XSNXTE(IN) AND PB1-XMNXTE(IN) ALLOYS IN ULTRASTRONG MAGNETIC-FIELDS, Semiconductors, 30(8), 1996, pp. 737-742
Authors:
AKIMOV BA
ALBUL AV
IVANCHIK II
RYABOVA LI
SLYNKO EI
KHOKHLOV DR
Citation: Ba. Akimov et al., INFLUENCE OF DOPING WITH GALLIUM ON THE PROPERTIES OF PB1-XGEXTE SOLID-SOLUTIONS, Semiconductors, 27(2), 1993, pp. 194-196
Citation: Gv. Belokopitov et al., DIELECTRIC SHF-RESPONSE OF FERROELECTRIC- SEMICONDUCTOR PB0.95MN0,05TE(GA), Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(11), 1993, pp. 138-141
Authors:
AKIMOV BA
DMITRIEV AV
KHOKHLOV DR
RYABOVA LI
Citation: Ba. Akimov et al., CARRIER TRANSPORT AND NONEQUILIBRIUM PHENOMENA IN DOPED PBTE AND RELATED MATERIALS, Physica status solidi. a, Applied research, 137(1), 1993, pp. 9-55