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REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING
Authors:
KURYSHEV GL MYASNIKOV AM OBODNIKOV VI SAFRONOV LN KHRYASCHEV GS
Citation:
Gl. Kuryshev et al., REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING, Semiconductors, 28(3), 1994, pp. 267-269
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