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Results: 1-9 |
Results: 9
REVERSIBILITY OF CHARGE TRAPPING AND SILC CREATION IN THIN OXIDES AFTER STRESS ANNEAL CYCLING/
Authors: RIESS P KIES R GHIBAUDO G PANANAKAKIS G BRINI J
Citation: P. Riess et al., REVERSIBILITY OF CHARGE TRAPPING AND SILC CREATION IN THIN OXIDES AFTER STRESS ANNEAL CYCLING/, Microelectronics and reliability, 38(6-8), 1998, pp. 1057-1061
GENERALIZED TRAPPING KINETIC-MODEL FOR THE OXIDE DEGRADATION AFTER FOWLER-NORDHEIM UNIFORM GATE STRESS (VOL 82, PG 2548, 1997)
Authors: PANANAKAKIS G GHIBAUDO G PAPADAS C VINCENT E KIES R
Citation: G. Pananakakis et al., GENERALIZED TRAPPING KINETIC-MODEL FOR THE OXIDE DEGRADATION AFTER FOWLER-NORDHEIM UNIFORM GATE STRESS (VOL 82, PG 2548, 1997), Journal of applied physics, 83(5), 1998, pp. 2869-2869
IMPACT OF OXIDE CHARGE BUILDUP ON FOWLER-NORDHEIM TUNNELING CURRENT CHARACTERISTICS IN A MOS STRUCTURE
Authors: KIES R GHIBAUDO G PANANAKAKIS G
Citation: R. Kies et al., IMPACT OF OXIDE CHARGE BUILDUP ON FOWLER-NORDHEIM TUNNELING CURRENT CHARACTERISTICS IN A MOS STRUCTURE, Microelectronic engineering, 36(1-4), 1997, pp. 267-270
TEMPERATURE-DEPENDENCE OF TRANSPORT AND TRAPPING PROPERTIES OF OXIDE-NITRIDE-OXIDE DIELECTRIC FILMS
Authors: KIES R GHIBAUDO G PANANAKAKIS G REIMBOLD G
Citation: R. Kies et al., TEMPERATURE-DEPENDENCE OF TRANSPORT AND TRAPPING PROPERTIES OF OXIDE-NITRIDE-OXIDE DIELECTRIC FILMS, Solid-state electronics, 41(7), 1997, pp. 1041-1049
GENERALIZED TRAPPING KINETIC-MODEL FOR THE OXIDE DEGRADATION AFTER FOWLER-NORDHEIM UNIFORM GATE STRESS
Authors: PANANAKAKIS C GHIBAUDO G PAPADAS C VINCENT E KIES R
Citation: C. Pananakakis et al., GENERALIZED TRAPPING KINETIC-MODEL FOR THE OXIDE DEGRADATION AFTER FOWLER-NORDHEIM UNIFORM GATE STRESS, Journal of applied physics, 82(5), 1997, pp. 2548-2557
ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID FROM FOWLER-NORDHEIM DERIVATIVE CHARACTERISTICS IN MOS STRUCTURES AFTER UNIFORM GATE STRESS
Authors: KIES R EGILSSON T GHIBAUDO G PANANAKAKIS G
Citation: R. Kies et al., ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID FROM FOWLER-NORDHEIM DERIVATIVE CHARACTERISTICS IN MOS STRUCTURES AFTER UNIFORM GATE STRESS, Microelectronics and reliability, 36(11-12), 1996, pp. 1619-1622
A METHOD FOR THE ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES AFTER UNIFORM GATE STRESS
Authors: KIES R EGILSSON T GHIBAUDO G PANANAKAKIS G
Citation: R. Kies et al., A METHOD FOR THE ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES AFTER UNIFORM GATE STRESS, Applied physics letters, 68(26), 1996, pp. 3790-3792
TEMPERATURE-DEPENDENCE OF THE OXIDE-NITRIDE-OXIDE INTERPOLY DIELECTRICS
Authors: KIES R GHIBAUDO G PANANAKAKIS G ROUXDITBUISSON O REIMBOLD G
Citation: R. Kies et al., TEMPERATURE-DEPENDENCE OF THE OXIDE-NITRIDE-OXIDE INTERPOLY DIELECTRICS, Microelectronic engineering, 28(1-4), 1995, pp. 309-312
TEMPERATURE-DEPENDENCE OF THE FOWLER-NORDHEIM CURRENT IN METAL-OXIDE-DEGENERATE SEMICONDUCTOR STRUCTURES
Authors: PANANAKAKIS G GHIBAUDO G KIES R PAPADAS C
Citation: G. Pananakakis et al., TEMPERATURE-DEPENDENCE OF THE FOWLER-NORDHEIM CURRENT IN METAL-OXIDE-DEGENERATE SEMICONDUCTOR STRUCTURES, Journal of applied physics, 78(4), 1995, pp. 2635-2641
Risultati: 1-9 |