ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID FROM FOWLER-NORDHEIM DERIVATIVE CHARACTERISTICS IN MOS STRUCTURES AFTER UNIFORM GATE STRESS

Authors
KIES R EGILSSON T GHIBAUDO G PANANAKAKIS G
Citation
R. Kies et al., ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID FROM FOWLER-NORDHEIM DERIVATIVE CHARACTERISTICS IN MOS STRUCTURES AFTER UNIFORM GATE STRESS, Microelectronics and reliability, 36(11-12), 1996, pp. 1619-1622
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1619 - 1622
Database
ISI
SICI code
0026-2714(1996)36:11-12<1619:AOOCAC>2.0.ZU;2-S
Abstract
A new method for the extraction of the oxide charge density and distri bution centroid based on the exploitation of the Fowler plot derivativ e characteristics is proposed. The comparison with the DiMaria method confirms the overall consistency of the new approach. The presence of negative charge within the oxide is shown to be responsible for an inc rease in the apparent Fowler barrier height after uniform gate stress. Copyright (C) 1996 Elsevier Science Ltd