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Results: 1-25/1272
Authors:
WONG M
Citation: M. Wong, SPECIAL ISSUE ADVANCES IN SUBMICRON MOS DEVICES AND TECHNOLOGY, Microelectronics and reliability, 38(9), 1998, pp. 1367-1368
Authors:
NAKAJIMA S
UEKI T
SHIONOYA Y
MAFUNE K
KUJI N
NAKAMURA S
KOMINE Y
TAKEDA T
Citation: S. Nakajima et al., CURRENT STATUS OF FAILURE ANALYSIS FOR ULSIS (REPRINTED FROM 21ST-INTERNATIONAL-CONFERENCE-ON-MICROELECTRONICS, VOL 2, PG 591-598, 1997), Microelectronics and reliability, 38(9), 1998, pp. 1369-1377
Authors:
GROESENEKEN G
MAES HE
Citation: G. Groeseneken et He. Maes, BASICS AND APPLICATIONS OF CHARGE-PUMPING IN SUBMICRON MOSFETS (REPRINTED FROM 21ST-INTERNATIONAL-CONFERENCE-ON-MICROELECTRONICS, VOL 2, PG581-589, 1997), Microelectronics and reliability, 38(9), 1998, pp. 1379-1389
Authors:
WONG SC
HUANG MS
SUN CY
LU LM
Citation: Sc. Wong et al., A PHENOMENON OF CHARGE TRAPPING SATURATION INDUCED BY RAPID THERMAL ANNEALING, Microelectronics and reliability, 38(9), 1998, pp. 1391-1399
Authors:
LEONG KC
LIU PC
YEO KS
GAN CH
QIAN G
LEE YM
CHAN L
Citation: Kc. Leong et al., COMPARISON OF LATCHUP IMMUNITY FOR SILICIDED SOURCE DRAIN AT DIFFERENT N(+) IMPLANT ENERGY/, Microelectronics and reliability, 38(9), 1998, pp. 1401-1405
Authors:
HUANG MQ
LAI PT
XU JP
ZENG SH
LI GQ
CHENG YC
Citation: Mq. Huang et al., SUPPRESSION OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY BACKSURFACE ARGON BOMBARDMENT, Microelectronics and reliability, 38(9), 1998, pp. 1407-1411
Authors:
MOMOSE HS
NAKAMURA S
KATSUMATA Y
IWAI H
Citation: Hs. Momose et al., APPLICATION OF DIRECT-TUNNELING GATE OXIDES TO HIGH-PERFORMANCE CMOS, Microelectronics and reliability, 38(9), 1998, pp. 1413-1423
Authors:
HUANG L
LAI PT
XU JP
CHENG YC
Citation: L. Huang et al., MECHANISM ANALYSIS OF GATE-INDUCED DRAIN LEAKAGE IN OFF-STATE N-MOSFET, Microelectronics and reliability, 38(9), 1998, pp. 1425-1431
Authors:
WONG H
POON MC
Citation: H. Wong et Mc. Poon, STUDY OF MOS GATE DIELECTRIC-BREAKDOWN DUE TO DRAIN AVALANCHE BREAKDOWN, Microelectronics and reliability, 38(9), 1998, pp. 1433-1438
Authors:
CHA CL
CHOR EF
GONG H
ZHANG AQ
CHAN L
XIE J
Citation: Cl. Cha et al., EVALUATION OF THE DIELECTRIC-BREAKDOWN OF REOXIDIZED NITRIDED-OXIDE (ONO) IN FLASH MEMORY DEVICES USING CONSTANT CURRENT-STRESSING TECHNIQUE, Microelectronics and reliability, 38(9), 1998, pp. 1439-1446
Authors:
WONG HSP
TAUR Y
FRANK DJ
Citation: Hsp. Wong et al., DISCRETE RANDOM DOPANT DISTRIBUTION EFFECTS IN NANOMETER-SCALE MOSFETS, Microelectronics and reliability, 38(9), 1998, pp. 1447-1456
Authors:
GRITSENKO VA
NOVIKOV YN
MOROKOV YN
WONG H
Citation: Va. Gritsenko et al., SIMULATION OF ELECTRONIC-STRUCTURE OF SI-SI BOND TRAPS IN OXIDE NITRIDE/OXIDE STRUCTURE/, Microelectronics and reliability, 38(9), 1998, pp. 1457-1464
Authors:
ZHANG WL
YANG ZL
Citation: Wl. Zhang et Zl. Yang, A NEW THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICRON MOSFETS WITH NONUNIFORM SUBSTRATE DOPINGS, Microelectronics and reliability, 38(9), 1998, pp. 1465-1469
Authors:
SIAGH R
Citation: R. Siagh, SUB-QUARTER MICRON SILICON INTEGRATED-CIRCUITS AND SINGLE-WAFER PROCESSING, Microelectronics and reliability, 38(9), 1998, pp. 1471-1483
Authors:
CHAN C
QIN S
Citation: C. Chan et S. Qin, PLASMA DOPING FOR ULTRA-SHALLOW JUNCTIONS, Microelectronics and reliability, 38(9), 1998, pp. 1485-1488
Authors:
YANG BL
JONES EC
CHEUNG NW
SHAO JQ
WONG H
CHENG YC
Citation: Bl. Yang et al., N(+) P ULTRA-SHALLOW JUNCTION FORMATION WITH PLASMA IMMERSION ION-IMPLANTATION/, Microelectronics and reliability, 38(9), 1998, pp. 1489-1494
Authors:
POON MC
HO CH
DENG F
LAU SS
WONG H
Citation: Mc. Poon et al., THERMAL-STABILITY OF COBALT AND NICKEL SILICIDES, Microelectronics and reliability, 38(9), 1998, pp. 1495-1498
Authors:
POON MC
CHAN M
ZHANG WQ
DENG F
LAU SS
Citation: Mc. Poon et al., STABILITY OF NISI IN BORON-DOPED POLYSILICON LINES, Microelectronics and reliability, 38(9), 1998, pp. 1499-1502
Authors:
SU JG
WONG SC
HUANG CT
Citation: Jg. Su et al., A STUDY OF TILT ANGLE EFFECT ON HALO PMOS PERFORMANCE, Microelectronics and reliability, 38(9), 1998, pp. 1503-1512
Authors:
KJAERGAARD C
JENSEN F
Citation: C. Kjaergaard et F. Jensen, SPECIAL ISSUE - RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Microelectronics and reliability, 38(6-8), 1998, pp. 9-9
Authors:
OVERHAUSER D
LLOYD JR
ROCHEL S
STEELE G
HUSSAIN SZ
Citation: D. Overhauser et al., FULL-CHIP RELIABILITY-ANALYSIS, Microelectronics and reliability, 38(6-8), 1998, pp. 851-859
Authors:
THOMAS RW
Citation: Rw. Thomas, AN ANALYSIS OF THE QUALITY AND RELIABILITY SUPPLEMENT TO THE SIA ROADMAP, Microelectronics and reliability, 38(6-8), 1998, pp. 861-868
Authors:
VERKLEIJ D
Citation: D. Verkleij, THE USE OF THE FOCUSED ION-BEAM IN FAILURE ANALYSIS, Microelectronics and reliability, 38(6-8), 1998, pp. 869-876
Authors:
RASRAS M
DEWOLF I
BENDER H
GROESENEKEN G
MAES HE
VANHAEVERBEKE S
DEPAUW P
Citation: M. Rasras et al., ANALYSIS OF I-DDQ FAILURES BY SPECTRAL PHOTON-EMISSION MICROSCOPY, Microelectronics and reliability, 38(6-8), 1998, pp. 877-882
Authors:
NIKAWA K
SAIKI T
INOUE S
OHTSU M
Citation: K. Nikawa et al., NEAR-FIELD-OPTICAL-PROBE INDUCED RESISTANCE-CHANGE-DETECTION (NF-OBIRCH) METHOD FOR IDENTIFYING DEFECTS IN AL AND TISI INTERCONNECTS, Microelectronics and reliability, 38(6-8), 1998, pp. 883-888