DISCRETE RANDOM DOPANT DISTRIBUTION EFFECTS IN NANOMETER-SCALE MOSFETS

In this paper, discrete random dopant distribution effects in nanomete r-scale MOSFETs were studied using three-dimensional, drift-diffusion ''atomistic'' simulations. Effects due to the random fluctuation of th e number of dopants in the MOSFET channel and the microscopic random d istribution of dopant atoms in I:he MOSFET channel were investigated. Using a simplified model for the threshold voltage fluctuation due to dopant number fluctuation, we examine the standard deviations of the t hreshold voltage that can be expected for a highly integrated chip. (C ) 1998 Elsevier Science Ltd. All rights reserved.