THERMAL-STABILITY OF COBALT AND NICKEL SILICIDES

Authors
POON MC HO CH DENG F LAU SS WONG H
Citation
Mc. Poon et al., THERMAL-STABILITY OF COBALT AND NICKEL SILICIDES, Microelectronics and reliability, 38(9), 1998, pp. 1495-1498
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
9
Year of publication
1998
Pages
1495 - 1498
Database
ISI
SICI code
0026-2714(1998)38:9<1495:TOCANS>2.0.ZU;2-W
Abstract
Thermal stability of cobalt and nickel silicides on crystalline Si (a- Si) and amorphous Si (a-Si) has been investigated. We have found that CoSi2 is thermally stable on a-Si and c-Si substrates up to 950 degree s C for 30 min. NiSi is stable and shows low resistivity on c-Si at ar ound 700 degrees C for 30 min, but is unstable on a-Si substrate even after annealing at 400 degrees C. (C) 1998 Elsevier Science Ltd. All r ights reserved.