ANALYSIS OF I-DDQ FAILURES BY SPECTRAL PHOTON-EMISSION MICROSCOPY

In this work, a fast identification of I,,, failures using spectroscop ic photon emission microscopy (SPEMMI) is proposed. The spectra obtain ed from failure sites on the I,,, failed chips were compared with the ones of known defective components. Four distinguishable spectra categ ories were identified. They were attributed to gate oxide breakdown, m etal shorts, blackbody radiation, and ESD caused junction spiking. The focused ion beam (FIB) technique was used to look at the damage sites for confirmation of the SPEMMI results. (C) 1998 Elsevier Science Ltd . All rights reserved.