BASICS AND APPLICATIONS OF CHARGE-PUMPING IN SUBMICRON MOSFETS (REPRINTED FROM 21ST-INTERNATIONAL-CONFERENCE-ON-MICROELECTRONICS, VOL 2, PG581-589, 1997)

In this paper, a review is made of the principles and the various appl ications of charge pumping in submicron MOSFETs. The use of the techni que for the analysis of MOSFET degradation, energy, and both lateral a nd vertical spatial profiling of the interface traps, is discussed. Th e role and detection of so-called geometric components is illustrated, and the recently discovered ability of the technique to characterise single interface traps in submicron MOSFETs is demonstrated. Finally, the application of charge pumping in other device!;, such as SOI-MOSFE Ts, EEPROM-cells and power transistors is briefly indicated. (C) 1997 IEEE. Published by Elsevier Science Ltd. All rights reserved.