THE USE OF THE FOCUSED ION-BEAM IN FAILURE ANALYSIS

Authors
VERKLEIJ D
Citation
D. Verkleij, THE USE OF THE FOCUSED ION-BEAM IN FAILURE ANALYSIS, Microelectronics and reliability, 38(6-8), 1998, pp. 869-876
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
6-8
Year of publication
1998
Pages
869 - 876
Database
ISI
SICI code
0026-2714(1998)38:6-8<869:TUOTFI>2.0.ZU;2-9
Abstract
Since the introduction of the Focused ion Beam (FIB), many application s have been developed. This article deals with a stand alone FIB in a failure analysis laboratory where it is used for material characterisa tion and sample preparation. In this paper examples will be given of F IB applications as used for failure analysis and process monitoring of semiconductor devices (C) 1998 Elsevier Science Ltd. All rights reser ved.