Authors: SANCHEZGARCIA MA SANCHEZ FJ CALLE F MUNOZ E CALLEJA E STEVENS KS KINNIBURGH M BERESFORD R BEAUMONT B GIBART P

Citation: Ma. Sanchezgarcia et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF GAN LAYERS GROWN ON SILICON AND SAPPHIRE SUBSTRATES, Solid-state electronics, 40(1-8), 1996, pp. 81-84

Authors: BERESFORD R OHTANI A STEVENS KS KINNIBURGH M

Citation: R. Beresford et al., INFLUENCE OF SUBSTRATE ELECTRICAL BIAS ON THE GROWTH OF GAN IN PLASMA-ASSISTED EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 792-795

Authors: OHTANI A STEVENS KS KINNIBURGH M BERESFORD R

Citation: A. Ohtani et al., ANALYSIS AND OPTIMIZATION OF THE ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR NITRIDE EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 902-907

Authors: STEVENS KS KINNIBURGH M BERESFORD R

Citation: Ks. Stevens et al., PHOTOCONDUCTIVE ULTRAVIOLET SENSOR USING MG-DOPED GAN ON SI(111), Applied physics letters, 66(25), 1995, pp. 3518-3520

Authors: STEVENS KS KINNIBURGH M SCHWARTZMAN AF OHTANI A BERESFORD R

Citation: Ks. Stevens et al., DEMONSTRATION OF A SILICON FIELD-EFFECT TRANSISTOR USING AIN AS THE GATE DIELECTRIC, Applied physics letters, 66(23), 1995, pp. 3179-3181

Authors: STEVENS KS OHTANI A KINNIBURGH M BERESFORD R

Citation: Ks. Stevens et al., MICROSTRUCTURE OF ALN ON SI (111) GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(3), 1994, pp. 321-323