Authors:
SANCHEZGARCIA MA
SANCHEZ FJ
CALLE F
MUNOZ E
CALLEJA E
STEVENS KS
KINNIBURGH M
BERESFORD R
BEAUMONT B
GIBART P
Citation: Ma. Sanchezgarcia et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF GAN LAYERS GROWN ON SILICON AND SAPPHIRE SUBSTRATES, Solid-state electronics, 40(1-8), 1996, pp. 81-84
Authors:
BERESFORD R
OHTANI A
STEVENS KS
KINNIBURGH M
Citation: R. Beresford et al., INFLUENCE OF SUBSTRATE ELECTRICAL BIAS ON THE GROWTH OF GAN IN PLASMA-ASSISTED EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 792-795
Authors:
OHTANI A
STEVENS KS
KINNIBURGH M
BERESFORD R
Citation: A. Ohtani et al., ANALYSIS AND OPTIMIZATION OF THE ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR NITRIDE EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 902-907
Authors:
STEVENS KS
KINNIBURGH M
SCHWARTZMAN AF
OHTANI A
BERESFORD R
Citation: Ks. Stevens et al., DEMONSTRATION OF A SILICON FIELD-EFFECT TRANSISTOR USING AIN AS THE GATE DIELECTRIC, Applied physics letters, 66(23), 1995, pp. 3179-3181
Authors:
STEVENS KS
OHTANI A
KINNIBURGH M
BERESFORD R
Citation: Ks. Stevens et al., MICROSTRUCTURE OF ALN ON SI (111) GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(3), 1994, pp. 321-323