INFLUENCE OF SUBSTRATE ELECTRICAL BIAS ON THE GROWTH OF GAN IN PLASMA-ASSISTED EPITAXY

Authors
BERESFORD R OHTANI A STEVENS KS KINNIBURGH M
Citation
R. Beresford et al., INFLUENCE OF SUBSTRATE ELECTRICAL BIAS ON THE GROWTH OF GAN IN PLASMA-ASSISTED EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 792-795
Citations number
14
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
792 - 795
Database
ISI
SICI code
1071-1023(1995)13:2<792:IOSEBO>2.0.ZU;2-#