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Results: 1-12 |
Results: 12
A VISIT TO THE DRESDEN FRAUENKIRCHE
Authors: JALILI R KIRCHNER PD MONTOYA J DUNCAN S GENEVRIEZ L LIPSCOMB JS WOLFE RH CODELLA CF
Citation: R. Jalili et al., A VISIT TO THE DRESDEN FRAUENKIRCHE, Presence, 5(1), 1995, pp. 87-94
DEEP LEVELS AND BAND BENDING AT GAP(100) AND GAP(110) SURFACES
Authors: BRILLSON LJ VITOMIROV I RAISANEN AD CHANG S LIN CL MCINTURFF DT KIRCHNER PD WOODALL JM
Citation: Lj. Brillson et al., DEEP LEVELS AND BAND BENDING AT GAP(100) AND GAP(110) SURFACES, Surface science, 309, 1994, pp. 303-308
CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF EPITAXIAL GAAS STRUCTURES
Authors: VATERLAUS A FEENSTRA RM KIRCHNER PD WOODALL JM PETTIT GD
Citation: A. Vaterlaus et al., CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF EPITAXIAL GAAS STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1502-1508
THE CONTINUING DRAMA OF THE SEMICONDUCTOR INTERFACE
Authors: WOODALL JM KIRCHNER PD FREEOUF JL MCINTURFF DT MELLOCH MR POLLAK FH
Citation: Jm. Woodall et al., THE CONTINUING DRAMA OF THE SEMICONDUCTOR INTERFACE, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 344(1673), 1993, pp. 521-532
GA-AS INTERMIXING IN GAAS(001) RECONSTRUCTIONS
Authors: FALTA J TROMP RM COPEL M PETTIT GD KIRCHNER PD
Citation: J. Falta et al., GA-AS INTERMIXING IN GAAS(001) RECONSTRUCTIONS, Physical review. B, Condensed matter, 48(8), 1993, pp. 5282-5288
DIFFERENT FERMI-LEVEL PINNING BEHAVIOR ON N-TYPE AND P-TYPE GAAS(001)
Authors: PASHLEY MD HABERERN KW FEENSTRA RM KIRCHNER PD
Citation: Md. Pashley et al., DIFFERENT FERMI-LEVEL PINNING BEHAVIOR ON N-TYPE AND P-TYPE GAAS(001), Physical review. B, Condensed matter, 48(7), 1993, pp. 4612-4615
STRUCTURE AND COMPOSITION OF GAAS(001) SURFACES - REPLY
Authors: FALTA J TROMP RM COPEL M PETTIT GD KIRCHNER PD
Citation: J. Falta et al., STRUCTURE AND COMPOSITION OF GAAS(001) SURFACES - REPLY, Physical review letters, 70(20), 1993, pp. 3173-3173
2-DIMENSIONAL ARSENIC-PRECIPITATE STRUCTURES IN GAAS
Authors: MELLOCH MR CHANG CL OTSUKA N MAHALINGAM K WOODALL JM KIRCHNER PD
Citation: Mr. Melloch et al., 2-DIMENSIONAL ARSENIC-PRECIPITATE STRUCTURES IN GAAS, Journal of crystal growth, 127(1-4), 1993, pp. 499-502
SOLUBILITY-LIMIT ACTIVATION OF SI DOPING AT MBE GAAS PN JUNCTIONS OBSERVED BY CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY
Authors: KIRCHNER PD VATERLAUS A FEENSTRA RM LIN CL PETTIT GD WOODALL JM
Citation: Pd. Kirchner et al., SOLUBILITY-LIMIT ACTIVATION OF SI DOPING AT MBE GAAS PN JUNCTIONS OBSERVED BY CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Journal of crystal growth, 127(1-4), 1993, pp. 1030-1031
INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS/
Authors: GEE RC LIN CL FARLEY CW SEABURY CW HIGGINS JA KIRCHNER PD WOODALL JM ASBECK PM
Citation: Rc. Gee et al., INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS/, Electronics Letters, 29(10), 1993, pp. 850-851
PHOTOEMISSION SPECTROSCOPY OF AL0.27GA0.73AS-AS PHOTODIODES
Authors: MCINTURFF DT WOODALL JM WARREN AC BRASLAU N PETTIT GD KIRCHNER PD MELLOCH MR
Citation: Dt. Mcinturff et al., PHOTOEMISSION SPECTROSCOPY OF AL0.27GA0.73AS-AS PHOTODIODES, Applied physics letters, 62(19), 1993, pp. 2367-2368
GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH, CHARACTERIZATION, AND LIGHT-EMITTING DIODE APPLICATION OF IN(X)GA(1-X)P ON GAP(100)
Authors: CHIN TP CHANG JCP KAVANAGH KL TU CW KIRCHNER PD WOODALL JM
Citation: Tp. Chin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH, CHARACTERIZATION, AND LIGHT-EMITTING DIODE APPLICATION OF IN(X)GA(1-X)P ON GAP(100), Applied physics letters, 62(19), 1993, pp. 2369-2371
Risultati: 1-12 |