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Authors: CIELASZYK ES KIRMSE KHR STEWART RA WENDT AE

Citation: Es. Cielaszyk et al., MECHANISMS FOR POLYCRYSTALLINE SILICON DEFECT PASSIVATION BY HYDROGENATION IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 67(21), 1995, pp. 3099-3101

Authors: KIRMSE KHR WENDT AE OEHRLEIN GS ZHANG Y

Citation: Khr. Kirmse et al., FLUOROCARBON HIGH-DENSITY PLASMAS .8. STUDY OF THE ION FLUX COMPOSITION AT THE SUBSTRATE IN ELECTRON-CYCLOTRON-RESONANCE ETCHING PROCESSES USING FLUOROCARBON GASES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1287-1292

Authors: MEYER JA KIRMSE KHR JENG JS PEREZMONTERO SY MAYNARD HL WENDT AE TAYLOR JW HERSHKOWITZ N

Citation: Ja. Meyer et al., EXPERIMENTS WITH BACK SIDE GAS-COOLING USING AN ELECTROSTATIC WAFER HOLDER IN AN ELECTRON-CYCLOTRON-RESONANCE ETCHING TOOL, Applied physics letters, 64(15), 1994, pp. 1926-1928