Authors:
KIRMSE KHR
WENDT AE
DISCH SB
WU JZ
ABRAHAM IC
MEYER JA
BREUN RA
WOODS RC
Citation: Khr. Kirmse et al., SIO2 TO SI SELECTIVITY MECHANISMS IN HIGH-DENSITY FLUOROCARBON PLASMA-ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 710-715
Authors:
CIELASZYK ES
KIRMSE KHR
STEWART RA
WENDT AE
Citation: Es. Cielaszyk et al., MECHANISMS FOR POLYCRYSTALLINE SILICON DEFECT PASSIVATION BY HYDROGENATION IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 67(21), 1995, pp. 3099-3101
Citation: Khr. Kirmse et al., FLUOROCARBON HIGH-DENSITY PLASMAS .8. STUDY OF THE ION FLUX COMPOSITION AT THE SUBSTRATE IN ELECTRON-CYCLOTRON-RESONANCE ETCHING PROCESSES USING FLUOROCARBON GASES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1287-1292
Authors:
MEYER JA
KIRMSE KHR
JENG JS
PEREZMONTERO SY
MAYNARD HL
WENDT AE
TAYLOR JW
HERSHKOWITZ N
Citation: Ja. Meyer et al., EXPERIMENTS WITH BACK SIDE GAS-COOLING USING AN ELECTROSTATIC WAFER HOLDER IN AN ELECTRON-CYCLOTRON-RESONANCE ETCHING TOOL, Applied physics letters, 64(15), 1994, pp. 1926-1928