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Results:
1-11
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Results: 11
Authors:
VYVODA MA
LEE H
MALYSHEV MV
KLEMENS FP
CERULLO M
DONNELLY VM
GRAVES DB
KORNBLIT A
LEE JTC
Citation: Ma. Vyvoda et al., EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3247-3258
Authors:
CHANG CP
KLEMENS FP
MAYNARD HL
LEE TC
KORNBLIT A
IBBOTSON DE
Citation: Cp. Chang et al., POLYCIDE GATE ETCHING USING A HELICAL RESONATOR ON AN APPLIED MATERIALS PRECISION-5000 PLATFORM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 646-651
CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY
Authors:
LAYADI N
DONNELLY VM
LEE JTC
KLEMENS FP
Citation: N. Layadi et al., CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 604-609
Authors:
CIRELLI RA
WEBER GR
KORNBLIT A
BAKER RM
KLEMENS FP
DEMARCO J
PAI CS
Citation: Ra. Cirelli et al., MULTILAYER INORGANIC ANTIREFLECTIVE SYSTEM FOR USE IN 248 NM DEEP-ULTRAVIOLET LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4229-4233
Authors:
LEE JTC
BLAYO N
TEPERMEISTER I
KLEMENS FP
MANSFIELD WM
IBBOTSON DE
Citation: Jtc. Lee et al., PLASMA-ETCHING PROCESS-DEVELOPMENT USING IN-SITU OPTICAL-EMISSION ANDELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3283-3290
Authors:
LEE JTC
LAYADI N
GUINN KV
MAYNARD HL
KLEMENS FP
IBBOTSON DE
TEPERMEISTER I
EGAN PO
RICHARDSON RA
Citation: Jtc. Lee et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2510-2518
Authors:
BLAYO N
CIRELLI RA
KLEMENS FP
LEE JTC
Citation: N. Blayo et al., ULTRAVIOLET-VISIBLE ELLIPSOMETRY FOR PROCESS-CONTROL DURING THE ETCHING OF SUBMICROMETER FEATURES, Journal of the Optical Society of America. A, Optics, image science,and vision., 12(3), 1995, pp. 591-599
Authors:
LIM DR
RAFFERTY CS
KLEMENS FP
Citation: Dr. Lim et al., THE ROLE OF THE SURFACE IN TRANSIENT ENHANCED DIFFUSION, Applied physics letters, 67(16), 1995, pp. 2302-2304
Authors:
LEVINE BF
WYNN JD
KLEMENS FP
SARUSI G
Citation: Bf. Levine et al., 1 GB S SI HIGH QUANTUM EFFICIENCY MONOLITHICALLY INTEGRABLE LAMBDA=0.88 MU-M DETECTOR/, Applied physics letters, 66(22), 1995, pp. 2984-2986
Authors:
TEPERMEISTER I
BLAYO N
KLEMENS FP
IBBOTSON DE
GOTTSCHO RA
LEE JTC
SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2310-2321
Authors:
BLAYO N
TEPERMEISTER I
BENTON JL
HIGASHI GS
BOONE T
ONUOHA A
KLEMENS FP
IBBOTSON DE
SAWIN HH
Citation: N. Blayo et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .4. PLASMA-INDUCED DAMAGE IN A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1340-1350
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1-11
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