AAAAAA
Results:
1-23
|
Results: 23
Authors:
HUANG X
SEEDS AJ
ROBERTS JS
KNIGHTS AP
Citation: X. Huang et al., MONOLITHICALLY INTEGRATED QUANTUM-CONFINED STARK-EFFECT TUNED LASER WITH UNIFORM FREQUENCY-MODULATION RESPONSE, IEEE photonics technology letters, 10(12), 1998, pp. 1697-1699
Authors:
KNIGHTS AP
APIWATWAJA R
GWILLIAM R
SEALY BJ
COLEMAN PG
Citation: Ap. Knights et al., A STUDY OF THE EVOLUTION OF CARRIER AND VACANCY DEPTH PROFILES WITH ANNEALING TEMPERATURE OF SI-IMPLANTED GAAS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1266-1271
Authors:
BROWN RA
KONONCHUK O
ROZGONYI GA
KOVESHNIKOV S
KNIGHTS AP
SIMPSON PJ
GONZALEZ F
Citation: Ra. Brown et al., IMPURITY GETTERING TO SECONDARY DEFECTS CREATED BY MEV ION-IMPLANTATION IN SILICON, Journal of applied physics, 84(5), 1998, pp. 2459-2465
Authors:
NEJIM A
KNIGHTS AP
JEYNES C
COLEMAN PG
PATEL CJ
Citation: A. Nejim et al., PROFILE BROADENING OF HIGH-DOSE GERMANIUM IMPLANTS INTO (100)SILICON AT ELEVATED-TEMPERATURES DUE TO CHANNELING, Journal of applied physics, 83(7), 1998, pp. 3565-3573
Authors:
KNIGHTS AP
NEJIM A
COLEMAN PG
KHEYRANDISH H
ROMANI S
Citation: Ap. Knights et al., OPEN-VOLUME DEFECT TAILS IN GE-IMPLANTED SI PROBED BY SLOW POSITRONS, Applied physics letters, 73(10), 1998, pp. 1373-1375
Authors:
KNIGHTS AP
PONJEE MWG
SIMPSON PJ
ZINKEALLMANG M
CARLOW GR
Citation: Ap. Knights et al., POSITRON CHARACTERIZATION OF DEFECTS FORMED DURING SOLID-PHASE EPITAXY OF COBALT SILICIDE, Semiconductor science and technology, 12(2), 1997, pp. 173-178
Authors:
SIMPSON PJ
KNIGHTS AP
GOLDBERG RD
AERS GC
LANDHEER D
Citation: Pj. Simpson et al., INTRINSIC ELECTRIC-FIELDS IN SILICON, Applied surface science, 116, 1997, pp. 211-214
Authors:
VANDERWERF DP
NATHWANI M
TOWNER A
TAYLOR JW
MORTON R
KNIGHTS AP
RICEEVANS PC
SZEKERES A
Citation: Dp. Vanderwerf et al., POSITRON STUDIES OF PLASMA-TREATED SILICON-WAFERS, Applied surface science, 116, 1997, pp. 228-230
Authors:
KNIGHTS AP
ALLARD LB
BREBNER JL
SIMPSON PJ
Citation: Ap. Knights et al., ANNEALING OF DEFECTS INDUCED BY GE IRRADIATION OF SILICA PROBED WITH VARIABLE-ENERGY POSITRONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 86-89
INVESTIGATION OF MAGNETRON-SPUTTERED TITANIUM NITRIDE FILMS USING POSITRON-ANNIHILATION SPECTROSCOPY
Authors:
KNIGHTS AP
SALEH AS
RICEEVANS PC
BULL SJ
ELSTNER F
RICHTER F
KUPFER H
Citation: Ap. Knights et al., INVESTIGATION OF MAGNETRON-SPUTTERED TITANIUM NITRIDE FILMS USING POSITRON-ANNIHILATION SPECTROSCOPY, Journal of physics. Condensed matter, 8(14), 1996, pp. 2479-2486
Authors:
GOODYEAR A
KNIGHTS AP
COLEMAN PG
Citation: A. Goodyear et al., ENERGY SPECTROSCOPY OF POSITRONS REEMITTED FROM AG(100), Physics letters. A, 212(4), 1996, pp. 221-226
Authors:
BRAUER G
ANWAND W
COLEMAN PG
KNIGHTS AP
PLAZAOLA F
PACAUD Y
SKORUPA W
STORMER J
WILLUTZKI P
Citation: G. Brauer et al., POSITRON STUDIES OF DEFECTS IN ION-IMPLANTED SIC, Physical review. B, Condensed matter, 54(5), 1996, pp. 3084-3092
Authors:
KNIGHTS AP
CARLOW GR
ZINKEALLMANG M
SIMPSON PJ
Citation: Ap. Knights et al., DEFECT EVOLUTION IN CO-IMPLANTED SI DURING ANNEALING AT 1000-DEGREES-C STUDIED USING VARIABLE-ENERGY POSITRONS AND RUTHERFORD BACKSCATTERING, Physical review. B, Condensed matter, 54(19), 1996, pp. 13955-13961
Authors:
KNIGHTS AP
COLEMAN PG
Citation: Ap. Knights et Pg. Coleman, THE EFFECT OF THERMALIZATION LENGTH AND WORK FUNCTION ON EPITHERMAL POSITRON EMISSION FROM SOLIDS, Surface science, 367(2), 1996, pp. 238-244
Authors:
KNIGHTS AP
SIMPSON PJ
ALLARD LB
BREBNER JL
ALBERT J
Citation: Ap. Knights et al., SI ION IMPLANTATION-INDUCED DAMAGE IN FUSED-SILICA PROBED BY VARIABLE-ENERGY POSITRONS, Journal of applied physics, 79(12), 1996, pp. 9022-9028
Authors:
MYLER U
GOLDBERG RD
KNIGHTS AP
LAWTHER DW
SIMPSON PJ
Citation: U. Myler et al., CHEMICAL INFORMATION IN POSITRON-ANNIHILATION SPECTRA, Applied physics letters, 69(22), 1996, pp. 3333-3335
Authors:
BRAUER G
ANWAND W
NICHT EM
COLEMAN PG
KNIGHTS AP
SCHUT H
KOGEL G
WAGNER N
Citation: G. Brauer et al., POSITRON STUDIES OF POLYCRYSTALLINE TIC, Journal of physics. Condensed matter, 7(47), 1995, pp. 9091-9099
Authors:
KNIGHTS AP
COLEMAN PG
Citation: Ap. Knights et Pg. Coleman, RELATIVE PROBABILITIES OF WORK-FUNCTION AND EPITHERMAL POSITRON REEMISSION FROM SILVER, Journal of physics. Condensed matter, 7(32), 1995, pp. 6477-6482
Authors:
KNIGHTS AP
COLEMAN PG
Citation: Ap. Knights et Pg. Coleman, THE OBSERVATION OF STRUCTURE IN THE DEPENDENCE OF THE 1-KEV POSITRON BACKSCATTERING COEFFICIENT ON TARGET ATOMIC-NUMBER, Journal of physics. Condensed matter, 7(18), 1995, pp. 3485-3492
Authors:
KNIGHTS AP
COLEMAN PG
Citation: Ap. Knights et Pg. Coleman, SECONDARY-ELECTRON EMISSION FROM AG(100) STIMULATED BY POSITRON AND ELECTRON-IMPACT, Applied surface science, 85(1-4), 1995, pp. 43-48
Authors:
OVERTON N
KNIGHTS AP
GOODYEAR A
COLEMAN PG
Citation: N. Overton et al., WORK FUNCTION AND EPITHERMAL POSITRON EMISSION FROM COPPER, Applied surface science, 85(1-4), 1995, pp. 54-58
Authors:
KNIGHTS AP
KOWALSKI G
SALEH AS
TOWNER A
PATEL MI
RICEEVANS PC
MOORE M
GLEDHILL GA
NOSSARZEWSKAORLOWSKA E
BRZOZOWSKI A
Citation: Ap. Knights et al., POSITRON-ANNIHILATION SPECTROSCOPY APPLIED TO POROUS SILICON FILMS, Journal of applied physics, 78(7), 1995, pp. 4411-4415
Authors:
GOODYEAR A
KNIGHTS AP
COLEMAN PG
Citation: A. Goodyear et al., ENERGY SPECTROSCOPY OF POSITRONS RE-EMITTED FROM POLYCRYSTALLINE TUNGSTEN, Journal of physics. Condensed matter, 6(45), 1994, pp. 9601-9611
Risultati:
1-23
|