Authors: KOCHETKOV AA KONYAEV VP SOROKIN VM TVERDOV SV

Citation: Aa. Kochetkov et al., CALCULATION OF THE LIFETIME OF HIGH-POWER LAMBDA=0.98 MU-M HETEROLASERS, Kvantovaa elektronika, 23(2), 1996, pp. 112-112

Authors: KOCHETKOV AA

Citation: Aa. Kochetkov, PREDICTION OF THE PARAMETERS OF THE DISTR IBUTION OF THE FAILURE TIMES OF INJECTION HETEROLASERS, Kvantovaa elektronika, 22(7), 1995, pp. 649-650

Authors: KOCHETKOV AA

Citation: Aa. Kochetkov, ESTIMATE OF THE RESISTANCE TO AGING AND I RRADIATION DEGRADATION OF CW INGAASP AND GAALAS HETEROLASERS, Kvantovaa elektronika, 21(5), 1994, pp. 422-422

Authors: ANDREEVA RI KOCHETKOV AA NIKOLAEV VN

Citation: Ri. Andreeva et al., ACTIVATION-ENERGY OF DEGRADATION OF INGAA SP HETEROLASERS, Kvantovaa elektronika, 20(9), 1993, pp. 837-838

Authors: ANDREEVA RI KOCHETKOV AA NIKOLAEV VN

Citation: Ri. Andreeva et al., CHANGE OF THRESHOLD CURRENT OF INGAASP-HE TEROLASERS (LAMBDA=1.55-MU-M) OWING TO AGING AND IRRADIATION, Kvantovaa elektronika, 20(1), 1993, pp. 45-46