Authors:
BER BY
BYSTROV SD
ZUSHINSKII DA
KORNYAKOVA OV
TUAN L
NOVIKOV SV
SAVELEV IG
TRETYAKOV VV
CHALDYSHEV VV
SHMARTSEV YV
Citation: By. Ber et al., FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES, Semiconductors, 27(9), 1993, pp. 818-820
Authors:
KONNIKOV SG
MELEBAEV D
RUD VY
BERKELIEV A
DURDYMURADOVA MG
KORNYAKOVA OV
Citation: Sg. Konnikov et al., VARISON AU-GAPXAS1-X STRUCTURES AND POTENTIALITIES OF THEIR APPLICATIONS IN ULTRAVIOLET RANGE PHOTODETECTORS, Pis'ma v Zurnal tehniceskoj fiziki, 19(4), 1993, pp. 57-64
Citation: Vv. Tretyakov et al., DETERMINATION OF COMPOSITION, DENSITY AND THE ANALYSIS OF COMPOSITIONHETEROGENEITIES BY THE DENSITY OF Y1BA2CU3OY-BASED SUBMICRON FILMS BYTHE X-RAY SPECTRAL MICROANALYSIS TECHNIQUE, Zurnal tehniceskoj fiziki, 63(11), 1993, pp. 176-181