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Results: 1-13 |
Results: 13
IN-SITU MONITORING OF GROWTH-RATE PARAMETERS IN HOT-WIRE ASSISTED GASSOURCE-MOLECULAR BEAM EPITAXY USING A QUARTZ MICROBALANCE
Authors: CHELLY R ANGOT T LOUIS P BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., IN-SITU MONITORING OF GROWTH-RATE PARAMETERS IN HOT-WIRE ASSISTED GASSOURCE-MOLECULAR BEAM EPITAXY USING A QUARTZ MICROBALANCE, Applied surface science, 115(3), 1997, pp. 299-306
GROWTH OF EPITAXIAL SIGE NANOSTRUCTURES AT LOW-TEMPERATURE ON SI(100)USING HOT-WIRE ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: CHELLY R WERCKMANN J ANGOT T LOUIS P BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., GROWTH OF EPITAXIAL SIGE NANOSTRUCTURES AT LOW-TEMPERATURE ON SI(100)USING HOT-WIRE ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY, Thin solid films, 294(1-2), 1997, pp. 84-87
HYDROGEN-INDUCED SEMIMETAL-SEMICONDUCTOR TRANSITION OF 2-DIMENSIONAL ERSI2 DETECTED BY ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: ANGOT T KOULMANN JJ GEWINNER G
Citation: T. Angot et al., HYDROGEN-INDUCED SEMIMETAL-SEMICONDUCTOR TRANSITION OF 2-DIMENSIONAL ERSI2 DETECTED BY ELECTRON-ENERGY-LOSS SPECTROSCOPY, Europhysics letters, 35(3), 1996, pp. 215-220
FREQUENCY-SHIFT OF THE SI-H VIBRATIONAL-MODES ON ERBIUM SILICIDE MEASURED BY HREELS
Authors: ANGOT T KOULMANN JJ BOLMONT D GEWINNER G
Citation: T. Angot et al., FREQUENCY-SHIFT OF THE SI-H VIBRATIONAL-MODES ON ERBIUM SILICIDE MEASURED BY HREELS, Surface science, 368, 1996, pp. 190-195
HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF THE SI(001)3X1 HYDROGENATED SURFACE
Authors: ANGOT T BOLMONT D KOULMANN JJ
Citation: T. Angot et al., HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF THE SI(001)3X1 HYDROGENATED SURFACE, Surface science, 352, 1996, pp. 401-406
CHEMISORPTION OF ATOMIC-HYDROGEN ON THE SI(111)7X7 RECONSTRUCTED SURFACE AT LOW-COVERAGE
Authors: STAUFFER L EZZEHAR H BOLMONT D CHELLY R KOULMANN JJ MINOT C
Citation: L. Stauffer et al., CHEMISORPTION OF ATOMIC-HYDROGEN ON THE SI(111)7X7 RECONSTRUCTED SURFACE AT LOW-COVERAGE, Surface science, 342(1-3), 1995, pp. 206-214
INTERACTION OF GEH4 WITH THE GE(100)2X1 SURFACE
Authors: KOULMANN JJ STEINMETZ D VAN S RINGEISEN F BOLMONT D
Citation: Jj. Koulmann et al., INTERACTION OF GEH4 WITH THE GE(100)2X1 SURFACE, Surface science, 333, 1995, pp. 409-413
THERMAL HOLE EMISSION FROM SI SI(1-X)GEX/SI QUANTUM-WELLS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: CHRETIEN O APETZ R VESCAN L SOUIFI A LUTH H SCHMALZ K KOULMANN JJ
Citation: O. Chretien et al., THERMAL HOLE EMISSION FROM SI SI(1-X)GEX/SI QUANTUM-WELLS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of applied physics, 78(9), 1995, pp. 5439-5447
GROWTH OF EPITAXIAL SI1-XGEX LAYERS ON SI(001) SURFACE, BY CATALYTICAL DECOMPOSITION OF DISILANE AND GERMANE - PHOTOEMISSION-STUDIES
Authors: CHELLY R ANGOT T BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., GROWTH OF EPITAXIAL SI1-XGEX LAYERS ON SI(001) SURFACE, BY CATALYTICAL DECOMPOSITION OF DISILANE AND GERMANE - PHOTOEMISSION-STUDIES, Applied physics letters, 67(12), 1995, pp. 1733-1735
GROWTH OF A GE SI/GE(100) HETEROSTRUCTURE BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 GASES - PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION STUDIES/
Authors: RINGEISEN F STEINMETZ D VAN S BOLMONT D KOULMANN JJ
Citation: F. Ringeisen et al., GROWTH OF A GE SI/GE(100) HETEROSTRUCTURE BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 GASES - PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION STUDIES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 14-17
EFFECT OF ANNEALING ON A GE THIN-FILM ON A SI(111)7X7 SURFACE - A STUDY USING ARUPS, XPD, AND LEED
Authors: VAN S STEINMETZ D BOLMONT D KOULMANN JJ
Citation: S. Van et al., EFFECT OF ANNEALING ON A GE THIN-FILM ON A SI(111)7X7 SURFACE - A STUDY USING ARUPS, XPD, AND LEED, Physical review. B, Condensed matter, 50(7), 1994, pp. 4424-4429
THERMAL AND CATALYTIC DECOMPOSITION OF SI2H6 ON A GE(100)2X1 SURFACE - PHOTOEMISSION AND LEED STUDIES
Authors: STEINMETZ D VAN S RINGEISEN F BOLMONT D KOULMANN JJ
Citation: D. Steinmetz et al., THERMAL AND CATALYTIC DECOMPOSITION OF SI2H6 ON A GE(100)2X1 SURFACE - PHOTOEMISSION AND LEED STUDIES, Surface science, 309, 1994, pp. 253-257
1ST STAGES OF GE ADSORPTION ON THE SI(111)7X7 SURFACE - EXPERIMENTAL AND THEORETICAL-STUDIES
Authors: STAUFFER L VAN S BOLMONT D KOULMANN JJ MINOT C
Citation: L. Stauffer et al., 1ST STAGES OF GE ADSORPTION ON THE SI(111)7X7 SURFACE - EXPERIMENTAL AND THEORETICAL-STUDIES, Surface science, 309, 1994, pp. 274-279
Risultati: 1-13 |