Authors:
BROWN RA
KONONCHUK O
ROZGONYI GA
KOVESHNIKOV S
KNIGHTS AP
SIMPSON PJ
GONZALEZ F
Citation: Ra. Brown et al., IMPURITY GETTERING TO SECONDARY DEFECTS CREATED BY MEV ION-IMPLANTATION IN SILICON, Journal of applied physics, 84(5), 1998, pp. 2459-2465
Citation: S. Koveshnikov et O. Kononchuk, GETTERING OF CU AND NI IN MEGA-ELECTRON-VOLT ION-IMPLANTED EPITAXIAL SILICON, Applied physics letters, 73(16), 1998, pp. 2340-2342
Citation: S. Koveshnikov et G. Rozgonyi, IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE - REPLY, Applied physics letters, 68(13), 1996, pp. 1870-1871
Authors:
AGARWAL A
KOVESHNIKOV S
KIRK H
BRAGA N
ROZGONYI GA
Citation: A. Agarwal et al., METASTABLE ELECTRICAL-ACTIVITY OF MISFIT-DISLOCATION-ASSOCIATED DEFECTS IN SI SI(GE) HETEROEPITAXIAL STRUCTURES - EBIC DLTS CORRELATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 43-47