Authors: KOZHUKHOV AV REVENKO MA FEDOROV AA KONARSKI P HERMAN MA

Citation: Av. Kozhukhov et al., INFLUENCE OF AL ADSORPTION ON IN AND GA THERMAL-DESORPTION FROM INP AND GAAS-SURFACES HEATED UNDER AS-4 FLUX, Thin solid films, 306(2), 1997, pp. 248-252

Authors: HERMAN MA KOZHUKHOV AV SADOWSKI JT

Citation: Ma. Herman et al., THE MBE TEMPERATURE WINDOW FOR CD1-XZNXTE 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) COMPOUNDS GROWN ON 2-DEGREES-OFF ORIENTED GAAS(100) SUBSTRATES, Journal of crystal growth, 174(1-4), 1997, pp. 768-774

Authors: KOZHUKHOV AV REVENKO MA FEDOROV AA

Citation: Av. Kozhukhov et al., MONITORING MOLECULAR FLUXES WITH THE USE OF REFLECTION MASS-SPECTROMETRY TO CONTROL THE COMPOSITION OF INXGA1-XAS FILMS, Instruments and experimental techniques, 40(1), 1997, pp. 133-135

Authors: KOZHUKHOV AV KONARSKI P HERMAN MA

Citation: Av. Kozhukhov et al., ION ETCHING EFFECTS OCCURRING IN SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILING OF INGAAS INP AND INGAAS/ALAS/INP MBE GROWN HETEROSTRUCTURES/, Acta Physica Polonica. A, 90(5), 1996, pp. 869-874

Authors: KONARSKI P HERMAN MA KOZHUKHOV AV OBODNIKOV VI

Citation: P. Konarski et al., MORPHOLOGY OF THE INALAS INP INTERFACE IN THE MBE-GROWN HETEROSTRUCTURES ANALYZED BY SIMS DEPTH PROFILING/, Thin solid films, 267(1-2), 1995, pp. 114-120