Authors: JOSHKIN VA PARKER CA BEDAIR SM KRASNOBAEV LY CUOMO JJ DAVIS RF SUVKHANOV A

Citation: Va. Joshkin et al., FINE-STRUCTURE OF NEAR-BAND-EDGE PHOTOLUMINESCENCE IN HE-IRRADIATED GAN GROWN ON SIC(), Applied physics letters, 72(22), 1998, pp. 2838-2840

Authors: KRASNOBAEV LY CUOMO JJ VYLETALINA OI

Citation: Ly. Krasnobaev et al., HARNESSING REVERSE ANNEALING PHENOMENON FOR SHALLOW P-N-JUNCTION FORMATION, Journal of applied physics, 82(10), 1997, pp. 5185-5190

Authors: BURAVLYOV AV KRASNOBAEV LY MALININ AA KIREIKO VV STARKOV VV VYATKIN AF

Citation: Av. Buravlyov et al., SOLID-PHASE EPITAXIAL REGROWTH OF BURIED AMORPHOUS-SILICON LAYERS OBTAINED BY ION IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 88(3), 1994, pp. 255-260

Authors: OMELYANOVSKAYA NM KRASNOBAEV LY FEDOROV VV

Citation: Nm. Omelyanovskaya et al., INFLUENCE OF POSTIMPLANTATION ANNEALING ON ELECTRICAL-PROPERTIES OF FLUORINE-IMPLANTED SILICON LAYERS, Semiconductors, 27(4), 1993, pp. 308-310

Authors: KRASNOBAEV LY OMELYANOVSKAYA NM MAKAROV VV

Citation: Ly. Krasnobaev et al., THE EFFECT OF FLUORINE ON THE REDISTRIBUTION OF BORON IN ION-IMPLANTED SILICON, Journal of applied physics, 74(10), 1993, pp. 6020-6022