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Citation: Mf. Nuban et al., ROOM-TEMPERATURE SCANNING PHOTOLUMINESCENCE FOR MAPPING THE LIFETIME AND THE DOPING DENSITY IN EPITAXIAL LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 125-129

Authors: NAGY SC ROBINSON BJ THOMPSON DA SIMMONS JG NUBAN MF KRAWCZYK SK BUCHHEIT M BLANCHET RC

Citation: Sc. Nagy et al., GROWTH OF INGAAS INP STRUCTURES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON SIO2-PATTERNED SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS/, Journal of crystal growth, 177(1-2), 1997, pp. 1-5

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Citation: Sk. Krawczyk et al., APPLICATION OF SPECTRALLY RESOLVED SCANNING PHOTOLUMINESCENCE TO ASSESS RELAXATION PROCESSES OF INGAAS AND INALAS LAYERS STRAINED IN COMPRESSION AND TENSION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 146-152

Authors: KRAWCZYK SK NUBAN MF

Citation: Sk. Krawczyk et Mf. Nuban, ROOM-TEMPERATURE SCANNING PHOTOLUMINESCENCE FOR MAPPING THE LIFETIME AND THE DOPING DENSITY IN COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 452-456

Authors: SCHOHE K KRAFFT F KLINGELHOFER C GARRIGUES M KRAWCZYK SK WEYHER J

Citation: K. Schohe et al., RECENT ADVANCES IN THE ASSESSMENT OF GAAS SUBSTRATE QUALITY BY SCANNING PHOTOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 121-127

Authors: KRAWCZYK SK

Citation: Sk. Krawczyk, SOLID-STATE MATERIALS FOR ADVANCED TECHNOLOGY - CONTAINING PAPERS PRESENTED AT THE 1ST WORKSHOP ON EXPERT EVALUATION AND CONTROL OF COMPOUND SEMICONDUCTOR-MATERIALS AND TECHNOLOGIES, MAY 19-22, 1992, ECULLY, FRANCE - FOREWORD, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 180000009-180000009