GROWTH OF INGAAS INP STRUCTURES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON SIO2-PATTERNED SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS/

Gas source molecular beam epitaxy has been used to grow InGaAs/InP epi taxial quantum-well structures in selected areas defined by SiO2-maske d InP substrates, with the goal of obtaining controlled in-plane varia tions in the band gap of the InGaAs wells. The dependence of the band gap on mask dimensions, growth temperature and arsenic flux has been s tudied. Photoluminescence spectroscopy performed on waveguide stripes, ranging from 2-50 mu m in width, reveals an increasing red-shift oi t he peak wavelength with decreasing stripe width. Red-shifts as large a s 40 meV are reported for the narrowest stripe widths grown with high substrate temperatures and low arsenic fluxes.