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Results: 1-3 |
Results: 3
ELECTRICAL-PROPERTIES OF N-GAN N(+)-GAAS INTERFACES/
Authors: KRIBES Y HARRISON I TUCK B CHENG TS FOXON CT
Citation: Y. Kribes et al., ELECTRICAL-PROPERTIES OF N-GAN N(+)-GAAS INTERFACES/, Journal of crystal growth, 190, 1998, pp. 773-777
INVESTIGATION OF AU SCHOTTKY CONTACTS ON GAN GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KRIBES Y HARRISON I TUCK B CHENG TS FOXON CT
Citation: Y. Kribes et al., INVESTIGATION OF AU SCHOTTKY CONTACTS ON GAN GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 913-916
INVESTIGATION OF ALUMINUM OHMIC CONTACTS TO N-TYPE GAN GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KRIBES Y HARRISON I TUCK B KIM KS CHENG TS FOXON CT
Citation: Y. Kribes et al., INVESTIGATION OF ALUMINUM OHMIC CONTACTS TO N-TYPE GAN GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(11), 1997, pp. 1500-1505
Risultati: 1-3 |