ELECTRICAL-PROPERTIES OF N-GAN N(+)-GAAS INTERFACES/

Current-voltage and capacitance-voltage characteristics of an n-GaN/n( +)-GaAs substrate heterojunction have been measured over the temperatu re range from 120 to 360 K. It was found that, depending on the GaAs s ubstrate temperature, the heterojunction behaves either as a Sack-to-b ack diodes structure or as a metal-insulator-semiconductor (MIS) struc ture. From the reverse bias saturation currents, an activation energy was estimated and was found to be 0.25 and 0.16 eV for the samples whi ch behaved as MIS structures. (C) 1998 Published by Elsevier Science B .V. All rights reserved.