Authors: MA ZJ CHEN JC LIU ZH KRICK JT CHENG YC HU C KO PK

Citation: Zj. Ma et al., SUPPRESSION OF BORON PENETRATION IN P-MOSFETS USING LOW-TEMPERATURE GATE-OXIDE N2O ANNEAL( POLYSILICON GATE P), IEEE electron device letters, 15(3), 1994, pp. 109-111

Authors: YOUNT JT LENAHAN PM KRICK JT

Citation: Jt. Yount et al., COMPARISON OF DEFECT STRUCTURE IN N2O- AND NH3-NITRIDED OXIDE DIELECTRICS, Journal of applied physics, 76(3), 1994, pp. 1754-1758

Authors: MA ZJ LIU ZH KRICK JT HUANG HJ CHENG YC HU CM KO PK

Citation: Zj. Ma et al., OPTIMIZATION OF GATE OXIDE N2O ANNEAL FOR CMOSFETS AT ROOM AND CRYOGENIC TEMPERATURES, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1364-1372

Authors: CHEN JC LIU ZH KRICK JT KO PK HU CM

Citation: Jc. Chen et al., DEGRADATION OF N2O-ANNEALED MOSFET CHARACTERISTICS IN RESPONSE TO DYNAMIC OXIDE STRESSING, IEEE electron device letters, 14(5), 1993, pp. 225-227