Authors:
LI VZQ
MIRABEDINI MR
HORNUNG BE
HEINISCH HH
XU M
BATCHELOR D
MAHER DM
WORTMAN JJ
KUEHN RT
Citation: Vzq. Li et al., STRUCTURE AND PROPERTIES OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SIO2 USING SI2H6, GEH4, AND B2H6 GASES, Journal of applied physics, 83(10), 1998, pp. 5469-5476
Authors:
LI VZQ
MIRABEDINI MR
KUEHN RT
WORTMAN JJ
OZTURK MC
BATCHELOR D
CHRISTENSEN K
MAHER DM
Citation: Vzq. Li et al., RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SILICON DIOXIDE FOR COMPLIMENTARY-METAL-OXIDE-SEMICONDUCTOR APPLICATIONS, Applied physics letters, 71(23), 1997, pp. 3388-3390
Authors:
MISRA V
XU XL
HORNUNG BE
KUEHN RT
MILES DS
HAUSER JR
WORTMAN JJ
Citation: V. Misra et al., HIGH-QUALITY GATE DIELECTRICS FORMED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF SILANE AND NITROUS-OXIDE, Journal of electronic materials, 25(3), 1996, pp. 527-535
Authors:
WILLIAMS CK
HAMAKER RW
GANESAN SG
KUEHN RT
SWARTZEL KR
OSULLIVAN J
Citation: Ck. Williams et al., LOW-TEMPERATURE DIFFUSION OF ALKALI-EARTH CATIONS IN THIN, VITREOUS SIO2-FILMS, Journal of the Electrochemical Society, 142(1), 1995, pp. 303-311