HIGH-QUALITY GATE DIELECTRICS FORMED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF SILANE AND NITROUS-OXIDE

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using Si H4 and N2O. We have investigated the effect of temperature, pressure, and SiH4 to N2O ratio on the electrical and material properties of as- deposited films. We have found that as-deposited oxides deposited at l ow temperatures, low pressures, and with a low silane to nitrous oxide ratio of similar to 0.5% give good material and electrical properties . The as-deposited films are stoichiometric in nature and have high de position rates. As-deposited films had very low D-it values, high brea kdown fields, and excellent subthreshold swing. The leakage currents a nd metal oxide semiconductor field effect transistor current drive, al though lower than thermal oxides, were found to be quite acceptable. W e have also investigated the thickness dependence of the films and fou nd that as the film thickness is reduced below 50 Angstrom, the reliab ility improves for all oxides including the silicon-rich deposited oxi des.