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Results:
1-7
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Results: 7
Authors:
KUEHNE SC
CHAN ABY
NGUYEN CT
WONG SS
Citation: Sc. Kuehne et al., SOI MOSFET WITH BURIED BODY STRAP BY WAFER BONDING, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1084-1091
Authors:
LEUNG YK
KUEHNE SC
HUANG VSK
NGUYEN CT
PAUL AK
PLUMMER JD
WONG SS
Citation: Yk. Leung et al., SPATIAL TEMPERATURE PROFILES DUE TO NONUNIFORM SELF-HEATING IN LDMOSSIN THIN SOI, IEEE electron device letters, 18(1), 1997, pp. 13-15
Authors:
ROUSSEAU PM
GRIFFIN PB
KUEHNE SC
PLUMMER JD
Citation: Pm. Rousseau et al., ENHANCED DIFFUSION BY ELECTRICAL DEACTIVATION OF ARSENIC AND ITS IMPLICATIONS FOR BIPOLAR-DEVICES, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 547-553
Authors:
NG CM
NGUYEN CT
KUEHNE SC
WONG SS
Citation: Cm. Ng et al., EVIDENCE OF REDUCED MAXIMUM E-FIELD IN QUASI-SOI MOSFETS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2308-2310
Authors:
NGUYEN CT
VERPLOEG EP
KUEHNE SC
PLUMMER JD
WONG SS
RENTELN P
Citation: Ct. Nguyen et al., MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS, IEEE electron device letters, 15(4), 1994, pp. 132-134
Authors:
NGUYEN CT
KUEHNE SC
WONG SS
GARLING LK
DROWLEY C
Citation: Ct. Nguyen et al., APPLICATION OF SELECTIVE EPITAXIAL SILICON AND CHEMOMECHANICAL POLISHING TO BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2343-2350
Authors:
LEE VV
KUEHNE SC
NGUYEN CT
BEILEY MA
WONG SS
Citation: Vv. Lee et al., A SELECTIVE CVD TUNGSTEN-STRAPPED POLYSILICON LOCAL INTERCONNECTION TECHNOLOGY, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1223-1230
Risultati:
1-7
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