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Results: 1-18 |
Results: 18
SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF (INGA)N ON GAN
Authors: WAGNER J RAMAKRISHNAN A BEHR D OBLOH H KUNZER M BACHEM KH
Citation: J. Wagner et al., SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF (INGA)N ON GAN, Applied physics letters, 73(12), 1998, pp. 1715-1717
NATURE OF THE 2.8 EV PHOTOLUMINESCENCE BAND IN MG DOPED GAN
Authors: KAUFMANN U KUNZER M MAIER M OBLOH H RAMAKRISHNAN A SANTIC B SCHLOTTER P
Citation: U. Kaufmann et al., NATURE OF THE 2.8 EV PHOTOLUMINESCENCE BAND IN MG DOPED GAN, Applied physics letters, 72(11), 1998, pp. 1326-1328
ELECTRICALLY AND OPTICALLY-ACTIVE MOLYBDENUM IMPURITIES IN COMMERCIALSIC SUBSTRATES
Authors: BAUR J KUNZER M DOMBROWSKI KF KAUFMANN U SCHNEIDER J BARANOV PG MOKHOV EN
Citation: J. Baur et al., ELECTRICALLY AND OPTICALLY-ACTIVE MOLYBDENUM IMPURITIES IN COMMERCIALSIC SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 313-316
TEMPERATURE-DEPENDENCE OF EXCITONIC PHOTOLUMINESCENCE AND RESIDUAL SHALLOW DONORS IN HIGH-PURITY GAN AL2O3/
Authors: MERZ C KUNZER M SANTIC B KAUFMANN U AKASAKI I AMANO H
Citation: C. Merz et al., TEMPERATURE-DEPENDENCE OF EXCITONIC PHOTOLUMINESCENCE AND RESIDUAL SHALLOW DONORS IN HIGH-PURITY GAN AL2O3/, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 176-180
PROPERTIES OF MG AND ZN ACCEPTORS IN MOVPE GAN AS STUDIED BY OPTICALLY DETECTED MAGNETIC-RESONANCE
Authors: KUNZER M BAUR J KAUFMANN U SCHNEIDER J AMANO H AKASAKI I
Citation: M. Kunzer et al., PROPERTIES OF MG AND ZN ACCEPTORS IN MOVPE GAN AS STUDIED BY OPTICALLY DETECTED MAGNETIC-RESONANCE, Solid-state electronics, 41(2), 1997, pp. 189-193
TRANSITION-METALS IN SIC POLYTYPES, AS STUDIED BY MAGNETIC-RESONANCE TECHNIQUES
Authors: BAUR J KUNZER M SCHNEIDER J
Citation: J. Baur et al., TRANSITION-METALS IN SIC POLYTYPES, AS STUDIED BY MAGNETIC-RESONANCE TECHNIQUES, Physica status solidi. a, Applied research, 162(1), 1997, pp. 153-172
FREE AND BOUND EXCITONS IN THIN WURTZITE GAN LAYERS ON SAPPHIRE
Authors: MERZ C KUNZER M KAUFMANN U AKASAKI I AMANO H
Citation: C. Merz et al., FREE AND BOUND EXCITONS IN THIN WURTZITE GAN LAYERS ON SAPPHIRE, Semiconductor science and technology, 11(5), 1996, pp. 712-716
IDENTIFICATION OF MOLYBDENUM IN 6H-SIC BY MAGNETIC-RESONANCE TECHNIQUES
Authors: DOMBROWSKI KF KUNZER M KAUFMANN U SCHNEIDER J BARANOV PG MOKHOV EN
Citation: Kf. Dombrowski et al., IDENTIFICATION OF MOLYBDENUM IN 6H-SIC BY MAGNETIC-RESONANCE TECHNIQUES, Physical review. B, Condensed matter, 54(10), 1996, pp. 7323-7327
DETERMINATION OF THE GAN ALN BAND DISCONTINUITIES VIA THE (-/0)-ACCEPTOR LEVEL OF IRON/
Authors: BAUR J KUNZER M MAIER K KAUFMANN U SCHNEIDER J
Citation: J. Baur et al., DETERMINATION OF THE GAN ALN BAND DISCONTINUITIES VIA THE (-/0)-ACCEPTOR LEVEL OF IRON/, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 61-64
MAGNETIC CIRCULAR-DICHROISM AND ELECTRON-SPIN-RESONANCE OF THE A(-) ACCEPTOR STATE OF VANADIUM, V3-SIC( IN 6H)
Authors: KUNZER M KAUFMANN U MAIER K SCHNEIDER J
Citation: M. Kunzer et al., MAGNETIC CIRCULAR-DICHROISM AND ELECTRON-SPIN-RESONANCE OF THE A(-) ACCEPTOR STATE OF VANADIUM, V3-SIC( IN 6H), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 118-121
PHOTOLUMINESCENCE OF RESIDUAL TRANSITION-METAL IMPURITIES IN GAN
Authors: BAUR J KAUFMANN U KUNZER M SCHNIEDER J AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K
Citation: J. Baur et al., PHOTOLUMINESCENCE OF RESIDUAL TRANSITION-METAL IMPURITIES IN GAN, Applied physics letters, 67(8), 1995, pp. 1140-1142
BISTABILITY OF THE TE DONOR IN ALSB-TE BULK CRYSTALS
Authors: JOST W KUNZER M KAUFMANN U BENDER H
Citation: W. Jost et al., BISTABILITY OF THE TE DONOR IN ALSB-TE BULK CRYSTALS, Physical review. B, Condensed matter, 50(7), 1994, pp. 4341-4344
IDENTIFICATION OF THE NEUTRAL V4-SIC BY ELECTRON-SPIN-RESONANCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE( IMPURITY IN CUBIC 3C)
Authors: DOMBROWSKI KF KAUFMANN U KUNZER M MAIER K SCHNEIDER J SHIELDS VB SPENCER MG
Citation: Kf. Dombrowski et al., IDENTIFICATION OF THE NEUTRAL V4-SIC BY ELECTRON-SPIN-RESONANCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE( IMPURITY IN CUBIC 3C), Physical review. B, Condensed matter, 50(24), 1994, pp. 18034-18039
DETERMINATION OF THE GAN ALN BAND-OFFSET VIA THE (-/0)-ACCEPTOR LEVELOF IRON/
Authors: BAUR J MAIER K KUNZER M KAUFMANN U SCHNEIDER J
Citation: J. Baur et al., DETERMINATION OF THE GAN ALN BAND-OFFSET VIA THE (-/0)-ACCEPTOR LEVELOF IRON/, Applied physics letters, 65(17), 1994, pp. 2211-2213
DEEP DONOR STATE OF VANADIUM IN CUBIC SILICON-CARBIDE (3C-SIC)
Authors: DOMBROWSKI KF KAUFMANN U KUNZER M MAIER K SCHNEIDER J SHIELDS VB SPENCER MG
Citation: Kf. Dombrowski et al., DEEP DONOR STATE OF VANADIUM IN CUBIC SILICON-CARBIDE (3C-SIC), Applied physics letters, 65(14), 1994, pp. 1811-1813
INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS
Authors: BAUR J MAIER K KUNZER M KAUFMANN U SCHNEIDER J AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K
Citation: J. Baur et al., INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS, Applied physics letters, 64(7), 1994, pp. 857-859
IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI
Authors: KUNZER M JOST W KAUFMANN U HOBGOOD HM THOMAS RN
Citation: M. Kunzer et al., IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI, Physical review. B, Condensed matter, 48(7), 1993, pp. 4437-4441
MAGNETIC CIRCULAR-DICHROISM AND SITE-SELECTIVE OPTICALLY DETECTED MAGNETIC-RESONANCE OF THE DEEP AMPHOTERIC VANADIUM IMPURITY IN 6H-SIC
Authors: KUNZER M MULLER HD KAUFMANN U
Citation: M. Kunzer et al., MAGNETIC CIRCULAR-DICHROISM AND SITE-SELECTIVE OPTICALLY DETECTED MAGNETIC-RESONANCE OF THE DEEP AMPHOTERIC VANADIUM IMPURITY IN 6H-SIC, Physical review. B, Condensed matter, 48(15), 1993, pp. 10846-10854
Risultati: 1-18 |