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Results: 3
STUDY OF POROUS SILICON OBTAINED BY KRYPTON ION-IMPLANTATION AND LASER ANNEALING
Authors: GALYAUTDINOV MF KURBATOVA NV BUINOVA EY SHTYRKOV EI BURKARAEV AA
Citation: Mf. Galyautdinov et al., STUDY OF POROUS SILICON OBTAINED BY KRYPTON ION-IMPLANTATION AND LASER ANNEALING, Semiconductors, 31(9), 1997, pp. 970-973
CHARACTERISTIC FEATURES OF RAMAN-SCATTERING OF TIGHT IN SILICON DOPEDWITH HIGH KRYPTON DOSES
Authors: GALYAUTDINOV MF KURBATOVA NV MOISEEV SA SHTYRKOV EI
Citation: Mf. Galyautdinov et al., CHARACTERISTIC FEATURES OF RAMAN-SCATTERING OF TIGHT IN SILICON DOPEDWITH HIGH KRYPTON DOSES, Semiconductors, 31(7), 1997, pp. 669-671
AN EFFICIENT FINITE-ELEMENT APPROACH TO PLANAR VIBRATIONS OF PIEZOELECTRIC PLATES
Authors: GETMAN IP KURBATOVA NV
Citation: Ip. Getman et Nv. Kurbatova, AN EFFICIENT FINITE-ELEMENT APPROACH TO PLANAR VIBRATIONS OF PIEZOELECTRIC PLATES, Acoustical physics, 40(4), 1994, pp. 514-520
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