Authors:
HAASE D
SCHMID M
KURNER W
DORNEN A
HARLE V
SCHOLZ F
BURKARD M
SCHWEIZER H
Citation: D. Haase et al., DEEP-LEVEL DEFECTS AND N-TYPE-CARRIER CONCENTRATION IN NITROGEN-IMPLANTED GAN, Applied physics letters, 69(17), 1996, pp. 2525-2527
Authors:
KAWAI T
YONEZU H
YAMAUCHI Y
LOPEZ M
PAK K
KURNER W
Citation: T. Kawai et al., INITIAL GROWTH-PROCESS OF GAAS ON GE SUBSTRATE AND PSEUDOMORPHIC SI INTERLAYER, Journal of crystal growth, 127(1-4), 1993, pp. 107-111