INITIAL GROWTH-PROCESS OF GAAS ON GE SUBSTRATE AND PSEUDOMORPHIC SI INTERLAYER

The initial growth process of GaAs on Ge and Si was investigated relat ing to the segregation of Ge and Si atoms in the hetero-systems with s mall lattice mismatch and no anti-phase domain. It was clarified that the initial growth process is distorted by the segregation of Ge and S i, changing the surface reconstruction. The segregated atoms disturb t he surface migration of Ga. It was estimated that little segregation o f Ge atoms appears even in the AlAs initial layer, which effectively s uppresses the segregation.