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Results: 1-15 |
Results: 15
ULTRASHALLOW SECONDARY-ION MASS-SPECTROSCOPY DEPTH PROFILING OF DOPING SPIKES AND SI SIGE/SI HETEROSTRUCTURES USING DIFFERENT PRIMARY SPECIES/
Authors: KRUGER D ILTGEN K HEINEMANN B KURPS R BENNINGHOVEN A
Citation: D. Kruger et al., ULTRASHALLOW SECONDARY-ION MASS-SPECTROSCOPY DEPTH PROFILING OF DOPING SPIKES AND SI SIGE/SI HETEROSTRUCTURES USING DIFFERENT PRIMARY SPECIES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 292-297
SUPPRESSED DIFFUSION OF BORON AND CARBON IN CARBON-RICH SILICON
Authors: RUCKER H HEINEMANN B ROPKE W KURPS R KRUGER D LIPPERT G OSTEN HJ
Citation: H. Rucker et al., SUPPRESSED DIFFUSION OF BORON AND CARBON IN CARBON-RICH SILICON, Applied physics letters, 73(12), 1998, pp. 1682-1684
SECONDARY-ION MASS-SPECTROSCOPY ULTRASHALLOW DEPTH PROFILING FOR SI SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: KRUGER D KURPS R HEINEMANN B HERZEL F ZEINDL HP
Citation: D. Kruger et al., SECONDARY-ION MASS-SPECTROSCOPY ULTRASHALLOW DEPTH PROFILING FOR SI SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 287-293
CHARACTERIZATION OF B AND SB DELTA-DOPING PROFILES IN SI AND SI1-XGEXALLOYS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KRUGER D GAWORZEWSKI P KURPS R ZEINDL HP
Citation: D. Kruger et al., CHARACTERIZATION OF B AND SB DELTA-DOPING PROFILES IN SI AND SI1-XGEXALLOYS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 341-347
INFLUENCE OF INTERDIFFUSION AND SURFACTANTS ON SI SIGE HETEROINTERFACES/
Authors: ZEINDL HP NILSSON S JAGDHOLD U KLATT J KURPS R KRUGER D BUGIEL E
Citation: Hp. Zeindl et al., INFLUENCE OF INTERDIFFUSION AND SURFACTANTS ON SI SIGE HETEROINTERFACES/, Applied surface science, 102, 1996, pp. 107-111
PHOSPHORUS SEGREGATION AT POLYSILICON-SILICON INTERFACES FROM IN-SITUP-SPIKE-DOPED SILICON FILMS
Authors: KRUGER D GAWORZEWSKI P KURPS R SCHLOTE J
Citation: D. Kruger et al., PHOSPHORUS SEGREGATION AT POLYSILICON-SILICON INTERFACES FROM IN-SITUP-SPIKE-DOPED SILICON FILMS, Semiconductor science and technology, 10(3), 1995, pp. 326-331
SHALLOW JUNCTION FORMATION BY PHOSPHORUS DIFFUSION FROM IN-SITU SPIKE-DOPED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON
Authors: KRUGER D SCHLOTE J ROPKE W KURPS R QUICK C
Citation: D. Kruger et al., SHALLOW JUNCTION FORMATION BY PHOSPHORUS DIFFUSION FROM IN-SITU SPIKE-DOPED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON, Microelectronic engineering, 26(2), 1995, pp. 119-129
DECONVOLUTION OF NARROW BORON SIMS DEPTH PROFILES IN SI AND SIGE
Authors: HERZEL F EHWALD KE HEINEMANN B KRUGER D KURPS R ROPKE W ZEINDL HP
Citation: F. Herzel et al., DECONVOLUTION OF NARROW BORON SIMS DEPTH PROFILES IN SI AND SIGE, Surface and interface analysis, 23(11), 1995, pp. 764-770
INFLUENCE OF SURFACTANTS ON MOLECULAR-BEAM EPITAXIAL GROWN SIGE SINGLE QUANTUM-WELLS STUDIED BY PHOTOLUMINESCENCE AND SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS
Authors: ZEINDL HP NILSSON S KLATT J KRUGER D KURPS R
Citation: Hp. Zeindl et al., INFLUENCE OF SURFACTANTS ON MOLECULAR-BEAM EPITAXIAL GROWN SIGE SINGLE QUANTUM-WELLS STUDIED BY PHOTOLUMINESCENCE AND SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS, Journal of crystal growth, 157(1-4), 1995, pp. 31-35
ANTIMONY IMPLANTATION INTO SI-B DOPING SUPERLATTICES - DAMAGE AND ENHANCED DIFFUSION
Authors: KRUGER D JAGDHOLD U KURPS R ZEINDL HP
Citation: D. Kruger et al., ANTIMONY IMPLANTATION INTO SI-B DOPING SUPERLATTICES - DAMAGE AND ENHANCED DIFFUSION, Journal of applied physics, 78(8), 1995, pp. 5008-5012
LATERAL INHOMOGENEOUS BORON SEGREGATION DURING SILICON THIN-FILM GROWTH WITH MOLECULAR-BEAM EPITAXY
Authors: KRUGER D LIPPERT G KURPS R OSTEN HJ
Citation: D. Kruger et al., LATERAL INHOMOGENEOUS BORON SEGREGATION DURING SILICON THIN-FILM GROWTH WITH MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 246-252
OXYGEN INCORPORATION AND OXYGEN-INDUCED DEFECT FORMATION IN THIN SI AND SI1-XGEX LAYERS ON SILICON GROWN BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE
Authors: KRUGER D MORGENSTERN T KURPS R BUGIEL E QUICK C KUHNE H
Citation: D. Kruger et al., OXYGEN INCORPORATION AND OXYGEN-INDUCED DEFECT FORMATION IN THIN SI AND SI1-XGEX LAYERS ON SILICON GROWN BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE, Journal of applied physics, 75(12), 1994, pp. 7829-7834
DOPANT ELECTRICAL-ACTIVITY OF SI AND SI1-XGEX MULTILAYER STRUCTURES DOPED WITH DELTA-LIKE BORON SPIKES AT DIFFERENT TEMPERATURES
Authors: GAWORZEWSKI P KRUGER D KURPS R RUCKER H ZEINDL HP
Citation: P. Gaworzewski et al., DOPANT ELECTRICAL-ACTIVITY OF SI AND SI1-XGEX MULTILAYER STRUCTURES DOPED WITH DELTA-LIKE BORON SPIKES AT DIFFERENT TEMPERATURES, Journal of applied physics, 75(12), 1994, pp. 7869-7875
SIMS AND AES CHARACTERIZATION OF ULTRATHIN NITROXIDE DIELECTRIC LAYERS ON SILICON PREPARED BY N2O-RTP
Authors: KRUGER D KURPS R WEIDNER G
Citation: D. Kruger et al., SIMS AND AES CHARACTERIZATION OF ULTRATHIN NITROXIDE DIELECTRIC LAYERS ON SILICON PREPARED BY N2O-RTP, Semiconductor science and technology, 8(9), 1993, pp. 1706-1710
NITROGEN SATURATION BEHAVIOR NEAR THE SIO2 SI-INTERFACE DURING N2O-RAPID THERMAL-OXIDATION/
Authors: WEIDNER G KURPS R BLUM K KRUGER D
Citation: G. Weidner et al., NITROGEN SATURATION BEHAVIOR NEAR THE SIO2 SI-INTERFACE DURING N2O-RAPID THERMAL-OXIDATION/, Microelectronic engineering, 22(1-4), 1993, pp. 77-80
Risultati: 1-15 |