INFLUENCE OF SURFACTANTS ON MOLECULAR-BEAM EPITAXIAL GROWN SIGE SINGLE QUANTUM-WELLS STUDIED BY PHOTOLUMINESCENCE AND SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS

SiGe single quantum wells grown by molecular beam epitaxy (MBE) were i nvestigated by low temperature photoluminescence (PL) experiments and secondary ion mass spectrometry (SIMS). Sb was deposited in different coverages at the lower interface of the quantum well. The effect of Sb on the optical and compositional properties was studied for samples g rown at different temperatures. A growth temperature window was determ ined were Sb acts as a surfactant, thereby improving the interface qua lity of the SiGe/Si heterostructure.