Authors:
HOEKSTRA RJ
KUSHNER MJ
SUKHAREV V
SCHOENBORN P
Citation: Rj. Hoekstra et al., MICROTRENCHING RESULTING FROM SPECULAR REFLECTION DURING CHLORINE ETCHING OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2102-2104
Citation: S. Rauf et Mj. Kushner, VIRTUAL PLASMA EQUIPMENT MODEL - A TOOL FOR INVESTIGATING FEEDBACK-CONTROL IN PLASMA PROCESSING EQUIPMENT, IEEE transactions on semiconductor manufacturing, 11(3), 1998, pp. 486-494
Citation: Rj. Hoekstra et Mj. Kushner, COMPARISON OF 2-DIMENSIONAL AND 3-DIMENSIONAL MODELS FOR PROFILE SIMULATION OF POLY-SI ETCHING OF FINITE-LENGTH TRENCHES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3274-3280
Citation: Hh. Hwang et al., CONSEQUENCES OF 3-DIMENSIONAL PHYSICAL AND ELECTROMAGNETIC STRUCTURESON DUST PARTICLE TRAPPING IN HIGH PLASMA-DENSITY MATERIAL PROCESSING DISCHARGES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2454-2462
Citation: Xd. Xu et Mj. Kushner, MULTIPLE MICRODISCHARGE DYNAMICS IN DIELECTRIC BARRIER DISCHARGES, Journal of applied physics, 84(8), 1998, pp. 4153-4160
Citation: Xdp. Xu et Mj. Kushner, ION COMPOSITION OF EXPANDING MICRODISCHARGES IN DIELECTRIC BARRIER DISCHARGES, Journal of applied physics, 83(12), 1998, pp. 7522-7532
Citation: Er. Keiter et Mj. Kushner, PLASMA TRANSPORT AROUND DUST AGGLOMERATES HAVING COMPLEX SHAPES, Journal of applied physics, 83(11), 1998, pp. 5670-5677
Citation: S. Rauf et Mj. Kushner, THE EFFECT OF RADIO-FREQUENCY PLASMA PROCESSING REACTOR CIRCUITRY ON PLASMA CHARACTERISTICS, Journal of applied physics, 83(10), 1998, pp. 5087-5094
Citation: Mj. Grapperhaus et al., DESIGN ISSUES IN IONIZED METAL PHYSICAL VAPOR-DEPOSITION OF COPPER, Journal of applied physics, 83(1), 1998, pp. 35-43
Citation: S. Rauf et Mj. Kushner, DIAGNOSTIC-TECHNIQUE FOR MEASURING PLASMA PARAMETERS NEAR SURFACES INRADIO-FREQUENCY DISCHARGES, Applied physics letters, 73(19), 1998, pp. 2730-2732
Citation: S. Rauf et Mj. Kushner, A SELF-CONSISTENT ANALYTICAL MODEL FOR NON-COLLISIONAL HEATING, Plasma sources science & technology, 6(4), 1997, pp. 518-523
Citation: Rj. Hoekstra et al., INTEGRATED PLASMA EQUIPMENT MODEL FOR POLYSILICON ETCH PROFILES IN ANINDUCTIVELY-COUPLED PLASMA REACTOR WITH SUBWAFER AND SUPERWAFER TOPOGRAPHY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1913-1921
Citation: S. Rauf et Mj. Kushner, ARGON METASTABLE DENSITIES IN RADIO-FREQUENCY AR, AR O-2 AND AR/CF4 ELECTRICAL DISCHARGES/, Journal of applied physics, 82(6), 1997, pp. 2805-2813
Citation: Hh. Hwang et Mj. Kushner, SIMULATION OF THE FORMATION OF 2-DIMENSIONAL COULOMB LIQUIDS AND SOLIDS IN DUSTY PLASMAS, Journal of applied physics, 82(5), 1997, pp. 2106-2114
Citation: Pn. Barnes et Mj. Kushner, ION-ION NEUTRALIZATION OF IODINE IN RADIOFREQUENCY INDUCTIVE DISCHARGES OF XE AND I-2 MIXTURES, Journal of applied physics, 82(5), 1997, pp. 2150-2155
Citation: Mj. Kushner, CONSEQUENCES OF ASYMMETRIC PUMPING IN LOW-PRESSURE PLASMA PROCESSING REACTORS - A 3-DIMENSIONAL MODELING STUDY, Journal of applied physics, 82(11), 1997, pp. 5312-5320
Citation: S. Rauf et Mj. Kushner, MODEL FOR NONCOLLISIONAL HEATING IN INDUCTIVELY-COUPLED PLASMA PROCESSING SOURCES, Journal of applied physics, 81(9), 1997, pp. 5966-5974
Citation: Mj. Grapperhaus et Mj. Kushner, A SEMIANALYTIC RADIO-FREQUENCY SHEATH MODEL INTEGRATED INTO A 2-DIMENSIONAL HYBRID MODEL FOR PLASMA PROCESSING REACTORS, Journal of applied physics, 81(2), 1997, pp. 569-577
Citation: I. Peres et Mj. Kushner, SPATIAL DISTRIBUTIONS OF POWER AND ION DENSITIES IN RF EXCITED REMOTEPLASMA REACTORS, Plasma sources science & technology, 5(3), 1996, pp. 499-509
Citation: Mj. Kushner et al., ELECTRON-BEAM CONTROLLED RADIO-FREQUENCY DISCHARGES FOR PLASMA PROCESSING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2094-2101
Citation: Fy. Huang et al., A MODEL FOR TRANSPORT AND AGGLOMERATION OF PARTICLES IN REACTIVE ION ETCHING PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 562-566
Citation: Wz. Collison et Mj. Kushner, CONCEPTUAL DESIGN OF ADVANCED INDUCTIVELY-COUPLED PLASMA-ETCHING TOOLS USING COMPUTER MODELING, IEEE transactions on plasma science, 24(1), 1996, pp. 135-136